NPT2021 GaN Wideband Transistor 48 V, 45 W Rev. V1 DC - 2.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain at 2.5 GHz 55 % Drain Efficiency at 2.5 GHz 100 % RF Tested TO-272 Package RoHS* Compliant and 260C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor Functional Schematic optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 2 1 Built using the SIGANTIC process - a proprietary GaN-on-Silicon technology. 3 Pin Configuration Pin No. Pin Name Function 1 RF / V RF Input / Gate IN G Ordering Information 2 RF / V RF Output / Drain OUT D Part Number Package 1 3 Pad Ground / Source NPT2021 Bulk Quantity 1. The exposed pad centered on the package bottom must be NPT2021-SMBPPR Sample Board connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: NPT2021 GaN Wideband Transistor 48 V, 45 W Rev. V1 DC - 2.5 GHz RF Electrical Specifications: T = 25C, V = 48 V, I = 350 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz G - 14.2 - dB SS Saturated Output Power CW, 2.5 GHz P - 47.5 - dBm SAT Drain Efficiency at Saturation CW, 2.5 GHz - 65 - % SAT Power Gain 2.5 GHz, P = 45 W G 12 12.8 - dB OUT P Drain Efficiency 2.5 GHz, P = 45 W 45 50 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 160 V I - - 14 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 7 mA GS DS GLK Gate Threshold Voltage V = 48 V, I = 14 mA V -2.5 -1.8 -0.5 V DS D T Gate Quiescent Voltage V = 48 V, I = 350 mA V -2.1 -1.5 -0.3 V DS D GSQ On Resistance V = 2 V, I = 105 mA R - 0.34 - DS D ON Saturated Drain Current V = 7 V pulsed, pulse width 300 s I - 8.2 - A DS D(SAT) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: