GaN on Silicon General Purpose Amplifier DC - 2.5 GHz, 48 V, 45 W NPT2021 Rev. V3 Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain 2.5 GHz 55% Drain Efficiency 2.5 GHz 100% RF Tested TO-272 Package RoHS* Compliant and 260C Reflow Compatible Functional Schematic Description The NPT2021 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. 2 The NPT2021 is ideally suited for defense 1 communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ 3 UHF/L/S-band radar. Built using the SIGANTIC process - a proprietary GaN-on-Silicon technology. Pin Configuration Ordering Information Part Number Package NPT2021 Bulk Quantity 1 RF / V RF Input / Gate IN G NPT2021-SMB1 Sample Board 2 RF / V RF Output / Drain OUT D 1 NPT2021-TR0250 Tape & Reel 3 Pad Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN on Silicon General Purpose Amplifier DC - 2.5 GHz, 48 V, 45 W NPT2021 Rev. V3 RF Electrical Specifications: T = 25C, V = 48 V, I = 350 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz G - 14.2 - dB SS Saturated Output Power CW, 2.5 GHz P - 47.5 - dBm SAT Drain Efficiency at Saturation CW, 2.5 GHz - 65 - % SAT Power Gain 2.5 GHz, P = 45 W G 12 12.8 - dB OUT P Drain Efficiency 2.5 GHz, P = 45 W 45 50 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 160 V I - - 14 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 7 mA GS DS GLK Gate Threshold Voltage V = 48 V, I = 14 mA V -2.5 -1.8 -0.5 V DS D T Gate Quiescent Voltage V = 48 V, I = 350 mA V -2.1 -1.5 -0.3 V DS D GSQ On Resistance V = 2 V, I = 105 mA R - 0.34 - DS D ON Saturated Drain Current V = 7 V pulsed, pulse width 300 s I - 8.2 - A DS D(SAT) 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: