X-On Electronics has gained recognition as a prominent supplier of NPT1010B RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. NPT1010B RF JFET Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

NPT1010B MACOM

NPT1010B electronic component of MACOM
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Part No.NPT1010B
Manufacturer: MACOM
Category: RF JFET Transistors
Description: RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN
Datasheet: NPT1010B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 25
Multiples : 25
25 : USD 178.5627
N/A

0
MOQ : 1
Multiples : 1
1 : USD 239.8578
N/A

   
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We are delighted to provide the NPT1010B from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NPT1010B and other electronic components in the RF JFET Transistors category and beyond.

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NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES Optimized for broadband operation from DC 2000MHz 100W P CW power at 900MHz 3dB 60-95 W P CW power from 500-1000MHz in SAT broadband application design High efficiency from 14 - 28V 1.4 C/W R with maximum T rating of 200C TH J Robust up to 10:1 VSWR mismatch at all phase DC 2000 MHz angles with no damage to the device 14 28 Volt Subject to EAR99 export control GaN HEMT RF Specicfi ations (CW, 900MHz): V = 28V, I = 700mA, T = 25C, Measured in Nitronex Test Fixture DS DQ A Symbol Parameter Min Typ Max Units P Average Output Power at 3dB Gain Compression 49.0 50.0 - dBm 3dB P Average Output Power at 1dB Gain Compression - 49.0 - dBm 1dB G Small Signal Gain 18.7 19.7 - dB SS h Drain Efficiency at 3dB Gain Compression 57 64 - % VSWR 10:1 VSWR at all phase angles No damage to the device Figure 1 - Typical CW Performance in Load-Pull, Figure 2 - Typical CW Performance in Load-Pull, V = 28V, I = 700mA V = 28V, I = 700mA DS DQ DS DQ NPT1010 Page 1 NDS-023 Rev. 3, April 2013NPT1010 DC Specifications: T = 25C A Symbol Parameter Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V 100 - - V BDS (V = -8V, I = 36mA) GS D Drain-Source Leakage Current I - 9 18 mA DLK (V = -8V, V = 60V) GS DS On Characteristics Gate Threshold Voltage V -2.3 -1.8 -1.3 V T (V = 28V, I = 36mA) DS D Gate Quiescent Voltage V -2.0 -1.5 -1.0 V GSQ (V = 28V, I = 700mA) DS D On Resistance R - 0.13 0.14 W ON (V = 2V, I = 270mA) GS D Drain Current I (V = 7V pulsed, 300 ms pulse width, 19.0 21.0 - A D,MAX DS 0.2% duty cycle) Thermal Resistance Specification Symbol Parameter Min Typ Max Units Thermal Resistance (Junction-to-Case), q - 1.4 - C/W JC T = 180 C J Absolute Maximum Ratings: Not simultaneous, T = 25C unless otherwise noted C Symbol Parameter Max Units V Drain-Source Voltage 100 V DS V Gate-Source Voltage -10 to 3 V GS I Gate Current 180 mA G P Total Device Power Dissipation (Derated above 25C) 125 W T T Storage Temperature Range -65 to 150 C STG T Operating Junction Temperature 200 C J HBM Human Body Model ESD Rating (per JESD22-A114) 1B (>500V) MM Machine Model ESD Rating (per JESD22-A115) Class A (200V) CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>1000V) NPT1010 Page 2 NDS-023 Rev. 3, April 2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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