NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES Optimized for broadband operation from DC 2000MHz 100W P CW power at 900MHz 3dB 60-95 W P CW power from 500-1000MHz in SAT broadband application design High efficiency from 14 - 28V 1.4 C/W R with maximum T rating of 200C TH J Robust up to 10:1 VSWR mismatch at all phase DC 2000 MHz angles with no damage to the device 14 28 Volt Subject to EAR99 export control GaN HEMT RF Specicfi ations (CW, 900MHz): V = 28V, I = 700mA, T = 25C, Measured in Nitronex Test Fixture DS DQ A Symbol Parameter Min Typ Max Units P Average Output Power at 3dB Gain Compression 49.0 50.0 - dBm 3dB P Average Output Power at 1dB Gain Compression - 49.0 - dBm 1dB G Small Signal Gain 18.7 19.7 - dB SS h Drain Efficiency at 3dB Gain Compression 57 64 - % VSWR 10:1 VSWR at all phase angles No damage to the device Figure 1 - Typical CW Performance in Load-Pull, Figure 2 - Typical CW Performance in Load-Pull, V = 28V, I = 700mA V = 28V, I = 700mA DS DQ DS DQ NPT1010 Page 1 NDS-023 Rev. 3, April 2013NPT1010 DC Specifications: T = 25C A Symbol Parameter Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V 100 - - V BDS (V = -8V, I = 36mA) GS D Drain-Source Leakage Current I - 9 18 mA DLK (V = -8V, V = 60V) GS DS On Characteristics Gate Threshold Voltage V -2.3 -1.8 -1.3 V T (V = 28V, I = 36mA) DS D Gate Quiescent Voltage V -2.0 -1.5 -1.0 V GSQ (V = 28V, I = 700mA) DS D On Resistance R - 0.13 0.14 W ON (V = 2V, I = 270mA) GS D Drain Current I (V = 7V pulsed, 300 ms pulse width, 19.0 21.0 - A D,MAX DS 0.2% duty cycle) Thermal Resistance Specification Symbol Parameter Min Typ Max Units Thermal Resistance (Junction-to-Case), q - 1.4 - C/W JC T = 180 C J Absolute Maximum Ratings: Not simultaneous, T = 25C unless otherwise noted C Symbol Parameter Max Units V Drain-Source Voltage 100 V DS V Gate-Source Voltage -10 to 3 V GS I Gate Current 180 mA G P Total Device Power Dissipation (Derated above 25C) 125 W T T Storage Temperature Range -65 to 150 C STG T Operating Junction Temperature 200 C J HBM Human Body Model ESD Rating (per JESD22-A114) 1B (>500V) MM Machine Model ESD Rating (per JESD22-A115) Class A (200V) CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>1000V) NPT1010 Page 2 NDS-023 Rev. 3, April 2013