X-On Electronics has gained recognition as a prominent supplier of RRF015P03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRF015P03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRF015P03TL ROHM

RRF015P03TL electronic component of ROHM
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See Product Specifications
Part No.RRF015P03TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 1.5A
Datasheet: RRF015P03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.539 ea
Line Total: USD 0.54 
Availability - 43876
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
43876
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3476
100 : USD 0.1749
1000 : USD 0.154
3000 : USD 0.1254
9000 : USD 0.1122
24000 : USD 0.1111
99000 : USD 0.1089

1003
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.574
10 : USD 0.4284
30 : USD 0.343
100 : USD 0.1722
274 : USD 0.1638

5820
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 360
Multiples : 1
360 : USD 0.2743
500 : USD 0.2643
1000 : USD 0.2558
2500 : USD 0.2482
5000 : USD 0.2416

1350
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 360
Multiples : 1
360 : USD 0.2743
500 : USD 0.2643
1000 : USD 0.2558

39
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 41
Multiples : 1
41 : USD 2.3144

7683
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 72
Multiples : 1
72 : USD 0.5475
113 : USD 0.3493
200 : USD 0.3478
500 : USD 0.2643
1000 : USD 0.2172
3000 : USD 0.1731
6000 : USD 0.1699

2910
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 353
Multiples : 1
353 : USD 0.4613

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRF015P03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRF015P03TL and other electronic components in the MOSFETs category and beyond.

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RRF015P03 Datasheet Pch -30V -1.5A Power MOSFET llOutline SOT-323T V -30V DSS TUMT3 R (Max.) 160m DS(on) I 1.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking UJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160531 - Rev.002 RRF015P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 115 160 GS D Static drain - source *4 R V = -4.5V, I = -0.7A - 170 240 m DS(on) GS D on - state resistance V = -4V, I = -0.7A - 190 270 GS D R Gate resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a seramic board (30300.8mm) 2 *3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160531 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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