X-On Electronics has gained recognition as a prominent supplier of RRH090P03GZETB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRH090P03GZETB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRH090P03GZETB ROHM

RRH090P03GZETB electronic component of ROHM
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See Product Specifications
Part No.RRH090P03GZETB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -9A POWER
Datasheet: RRH090P03GZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.8286 ea
Line Total: USD 2071.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.8286

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.9473
10 : USD 1.6757
100 : USD 1.3067
500 : USD 1.0795
1000 : USD 0.8522

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.9473
10 : USD 1.6757
100 : USD 1.3067
500 : USD 1.0795
1000 : USD 0.8522

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.6611
5000 : USD 0.6347

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RRH090P03GZETB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRH090P03GZETB and other electronic components in the MOSFETs category and beyond.

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RRH090P03 Datasheet Pch -30V -9A Power MOSFET llOutline SOP8 V -30V DSS R (Max.) 15.4m DS(on) I 9A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type DC/DC Converter Basic ordering unit (pcs) 2500 Taping code TB1 Marking RRH090P03 llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS *1 I Continuous drain current 9 A D *2 I Pulsed drain current 36 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 0.6 mJ AS *4 P 2 W D Power dissipation *5 P 0.65 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.001 RRH090P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 /W thJA Thermal resistance, junction - ambient *5 R - - 192 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -9A - 11 15.4 GS D V = -4.5V, I = -4.5A - 15 21 GS D Static drain - source *6 R m DS(on) on - state resistance V = -4V, I = -4.5A - 17 24 GS D V = , I = - - - GS D Gate input resistance R f = 1MHz, open drain - 3.0 - G Forward Transfer *6 Y V = -10V, I = -9A 10 20 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 10H, V = -15V, R = 25, starting T = 25C DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (20200.8mm) www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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