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X-On Electronics has gained recognition as a prominent supplier of RS1E220ATTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E220ATTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E220ATTB1 ROHM

RS1E220ATTB1 electronic component of ROHM
RS1E220ATTB1 ROHM
RS1E220ATTB1 MOSFETs
RS1E220ATTB1  Semiconductors

Images are for reference only
See Product Specifications
Part No. RS1E220ATTB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -76A POWER
Datasheet: RS1E220ATTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3 ea
Line Total: USD 3.3 
Availability - 5583
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 5.8442
10 : USD 3.8495
30 : USD 3.7854
100 : USD 3.7194

5583
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 3.3
10 : USD 2.185
100 : USD 1.562
500 : USD 1.309
1000 : USD 1.276
2500 : USD 1.221

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RS1E220ATTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E220ATTB1 and other electronic components in the MOSFETs category and beyond.

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RS1E220AT Datasheet Pch -30V -76A Power MOSFET llOutline V -30V DSS R (Max.) 4.1m DS(on) HSOP8 I 76A D P 34W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB1 Marking RS1E220AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS *1 T = 25C I 76 A c D Continuous drain current T = 25C I 22 A a D *2 I Pulsed drain current 88 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -22 A AS *3 E Avalanche energy, single pulse 74 mJ AS *1 P 34 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/10 20180328 - Rev.001 RS1E220AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.67 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = -2mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -22A - 3.3 4.1 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -22A - 4.6 5.8 GS D R Gate resistance f=1MHz, open drain - 3.4 - G Forward Transfer *5 Y V = -5V, I = -22A 25 - - S fs DS D Admittance *1 T = 25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20180328 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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