X-On Electronics has gained recognition as a prominent supplier of RS1E260ATTB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E260ATTB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E260ATTB1 ROHM

RS1E260ATTB1 electronic component of ROHM
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See Product Specifications
Part No.RS1E260ATTB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -80A POWER
Datasheet: RS1E260ATTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.174 ea
Line Total: USD 3.17 
Availability - 6188
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 4.2185
10 : USD 4.1114
30 : USD 4.0386
100 : USD 3.9659

6188
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 3.174
10 : USD 2.3
100 : USD 1.7365
500 : USD 1.587
1000 : USD 1.5295
2500 : USD 1.518

   
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We are delighted to provide the RS1E260ATTB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E260ATTB1 and other electronic components in the MOSFETs category and beyond.

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RS1E260AT Datasheet Pch -30V -80A Power MOSFET llOutline V -30V DSS R (Max.) 3.1m DS(on) HSOP8 I 80A D P 40W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (HSOP8) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB1 Marking RS1E260AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 26 A a D *2 I Pulsed drain current 104 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -26 A AS *3 E Avalanche energy, single pulse 52 mJ AS *1 P 40 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 RS1E260AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.1 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = -1mA -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -26A - 2.5 3.1 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -26A - 3.5 4.3 GS D R Gate resistance f=1MHz, open drain - 3.9 - G Forward Transfer *5 Y V = -5V, I = -26A 28 - - S fs DS D Admittance *1 T = 25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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