X-On Electronics has gained recognition as a prominent supplier of RS1E280BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E280BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E280BNTB ROHM

RS1E280BNTB electronic component of ROHM
RS1E280BNTB ROHM
RS1E280BNTB MOSFETs
RS1E280BNTB  Semiconductors

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See Product Specifications
Part No. RS1E280BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RS1E280BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2362 ea
Line Total: USD 1.24 
Availability - 8202
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8202
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.2362
10 : USD 0.8388
100 : USD 0.5236
500 : USD 0.4301
1000 : USD 0.3938
2500 : USD 0.3421
5000 : USD 0.341
10000 : USD 0.3278

97
Ship by Fri. 02 May to Thu. 08 May
MOQ : 94
Multiples : 1
94 : USD 1.391
100 : USD 0.988

226
Ship by Fri. 02 May to Thu. 08 May
MOQ : 118
Multiples : 1
118 : USD 1.0537

2134
Ship by Fri. 02 May to Thu. 08 May
MOQ : 118
Multiples : 1
118 : USD 1.4906

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E280BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E280BNTB and other electronic components in the MOSFETs category and beyond.

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RS1E280BN Datasheet Nch 30V 80A Middle Power MOSFET llOutline V 30V DSS R (Max.) 2.3m DS(on) HSOP8 I 80A D P 30W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E280BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 28 A a D *2 I Pulsed drain current 112 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 48 A AS *3 E Avalanche energy, single pulse 190 mJ AS *1 P 30 W D Power dissipation *4 P 3 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.005 RS1E280BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.2 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 16V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 28A - 1.7 2.3 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 28A - 2.3 3.2 GS D R Gate resistance f=1MHz, open drain - 1.0 - G Forward Transfer *4 Y V = 5V, I = 28A 20 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 24V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu Board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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