X-On Electronics has gained recognition as a prominent supplier of RSD160P05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD160P05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD160P05TL ROHM

RSD160P05TL electronic component of ROHM
RSD160P05TL ROHM
RSD160P05TL MOSFETs
RSD160P05TL  Semiconductors

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See Product Specifications
Part No. RSD160P05TL
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 45 V 16A (Ta) 20W (Tc) Surface Mount CPT3
Datasheet: RSD160P05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2625 ea
Line Total: USD 1.26 
Availability - 2418
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 1.1463
10 : USD 1.1198
30 : USD 0.9454
100 : USD 0.837

2418
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 1.2625
10 : USD 0.8316
100 : USD 0.5951
500 : USD 0.5192
1000 : USD 0.4334
2500 : USD 0.4147
5000 : USD 0.4147
10000 : USD 0.3993
25000 : USD 0.3982

10458
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 117
Multiples : 1
117 : USD 0.9129
250 : USD 0.8762
500 : USD 0.8122
1000 : USD 0.7856
2500 : USD 0.7624
5000 : USD 0.7419
10000 : USD 0.7238

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSD160P05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD160P05TL and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET CPT3 (SC-63) <SOT-428> Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 2500 2 RSD160P05 (1) (2) (3) (1) Gate 1 ESD PROTECTION DIODE (2) Drain (3) Source 2 BODY DIODE Absolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit Drain-source voltage V 45 V DSS Gate-source voltage V 20 V GSS Continuous I 16 A D Drain current *1 Pulsed I 32 A DP Source current Continuous I 16 A S *1 (Body Diode) Pulsed I 32 A SP *2 Power dissipation P 20 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 6.25 C / W th (ch-c) * T =25C c www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New DesignsData Sheet RSD160P05 Electrical characteristics (T = 25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 45 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =45V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 3.0 V V =10V, I =1mA GS (th) DS D -35 50 I =16A, V =10V D GS Static drain-source on-state * R m DS (on) -45 63 I =8A, V =4.5V D GS resistance -50 70 I =8A, V =4.0V D GS * Forward transfer admittance l Y l 8.0 - - S I =8A, V =10V fs D DS Input capacitance C - 2000 - pF V =10V iss DS Output capacitance C - 250 - pF V =0V oss GS Reverse transfer capacitance C - 140 - pF f=1MHz rss Turn-on delay time t * - 13 - ns I =8.0A, V 25V d(on) D DD Rise time t * - 22 - ns V =10V r GS Turn-off delay time t * - 90 - ns R =3.1 d(off) L * Fall time t - 50 - ns R =10 f G * Total gate charge Q - 16.0 - nC V 25V g DD * Gate-source charge Q - 5.2 - nC I =16A, gs D Gate-drain charge Q * - 5.0 - nC V =5V gd GS *Pulsed Body diode characteristics (Source-Drain) (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =16A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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