X-On Electronics has gained recognition as a prominent supplier of RSD201N10TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD201N10TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD201N10TL ROHM

RSD201N10TL electronic component of ROHM
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See Product Specifications
Part No.RSD201N10TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Nch MOSFET Drive Nch
Datasheet: RSD201N10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
43: USD 0.962 ea
Line Total: USD 41.37 
Availability - 639
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 43  Multiples: 1
Pack Size: 1
Availability Price Quantity
1086
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 98
Multiples : 1
98 : USD 1.14
100 : USD 1.089
250 : USD 1.0454
500 : USD 1.0076
1000 : USD 0.9747

639
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 43
Multiples : 1
43 : USD 0.962
50 : USD 0.9165
100 : USD 0.819
200 : USD 0.7865
500 : USD 0.7849

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSD201N10TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD201N10TL and other electronic components in the MOSFETs category and beyond.

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RSD201N10 Nch 100V 20A Power MOSFET Datasheet Outline V 100V DSS CPT3 (SC-63) R (Max.) 46m DS(on) <SOT-428> (3) I 20A D (2) (1) P 20W D Features Inner circuit (3) 1) Low on-resistance. 1 (1) Gate 2) Fast switching speed. (2) Drain (1) (3) Source 3) Drive circuits can be simple. 2 1 ESD PROTECTION DIODE 4) Parallel use is easy. 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking 201N10 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS *1 T = 25C I 20 A c D Continuous drain current *1 T = 100C I 10 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 14.6 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 20 W c D Power dissipation T = 25C P 0.85 W a D T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 1/12 Not Recommended for New DesignsData Sheet RSD201N10 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V V = 0V, I = 1mA 100 - - V (BR)DSS GS D V = 100V, V = 0V DS GS -- 1 T = 25C j Zero gate voltage drain current I A DSS V = 100V, V = 0V DS GS - - 100 T = 125C j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS V = 10V, I = 1mA Gate threshold voltage V 1.0 - 2.5 V GS (th) DS D V = 10V, I = 20A -33 46 GS D V = 4.0V, I = 20A -36 50 GS D Static drain - source *4 R m DS(on) on - state resistance V = 10V, I = 20A GS D -60 84 T = 125C j g V = 10V, I = 20A Forward transfer admittance 15 30 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.11 - Rev.C 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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