X-On Electronics has gained recognition as a prominent supplier of RSF014N03TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RSF014N03TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RSF014N03TL ROHM

RSF014N03TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RSF014N03TL
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET N-CH 30V 1.4A TUMT3
Datasheet: RSF014N03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1729 ea
Line Total: USD 518.7

Availability - 20370
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
20370
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1729
6000 : USD 0.1729
9000 : USD 0.1729
15000 : USD 0.1729
30000 : USD 0.1729

3328
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5923
10 : USD 0.4588
100 : USD 0.3496
500 : USD 0.2921
1000 : USD 0.2449
3000 : USD 0.2093
9000 : USD 0.2081
24000 : USD 0.207

14550
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.2701

4534
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 42
Multiples : 1
42 : USD 0.9897
54 : USD 0.7621
100 : USD 0.5997
200 : USD 0.5964
500 : USD 0.468
1000 : USD 0.3802
2000 : USD 0.377
3000 : USD 0.3055

1414
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 341
Multiples : 1
341 : USD 0.5583
500 : USD 0.5166
1000 : USD 0.4997

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the RSF014N03TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF014N03TL and other electronic components in the MOSFET category and beyond.

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RSF014N03 Datasheet Nch 30V 1.4A Middle Power MOSFET llOutline SOT-323T V 30V DSS R (Max.) 240m DS(on) TUMT3 I 1.4A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Space saving small surface mount package (TUMT3). 3) 4V drive llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 1.4 A D *1 I Pulsed drain current 5.6 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151111 - Rev.001 RSF014N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.4A - 170 240 GS D Static drain - source *4 R V = 4.5V, I = 1.4A - 250 350 m DS(on) GS D on - state resistance V = 4.0V, I = 1.4A - 270 380 GS D R Gate resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = 10V, I = 1.4A 1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151111 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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