X-On Electronics has gained recognition as a prominent supplier of RSF014N03TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSF014N03TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSF014N03TL ROHM

RSF014N03TL electronic component of ROHM
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See Product Specifications
Part No.RSF014N03TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N-CH 30V 1.4A TUMT3
Datasheet: RSF014N03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1676 ea
Line Total: USD 502.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
3836
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 137
Multiples : 1
137 : USD 0.2974
200 : USD 0.2957
500 : USD 0.2405
1000 : USD 0.2243
3000 : USD 0.2112

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSF014N03TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF014N03TL and other electronic components in the MOSFETs category and beyond.

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RSF014N03 Datasheet Nch 30V 1.4A Middle Power MOSFET llOutline SOT-323T V 30V DSS R (Max.) 240m DS(on) TUMT3 I 1.4A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) Space saving small surface mount package (TUMT3). 3) 4V drive llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 1.4 A D *1 I Pulsed drain current 5.6 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151111 - Rev.001 RSF014N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.4A - 170 240 GS D Static drain - source *4 R V = 4.5V, I = 1.4A - 250 350 m DS(on) GS D on - state resistance V = 4.0V, I = 1.4A - 270 380 GS D R Gate resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = 10V, I = 1.4A 1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151111 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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