RSD080P05TL ROHM

Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET CPT3 (SC-63) <SOT-428> Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 2500 2 RSD080P05 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 45 V DSS Gate-source voltage V 20 V GSS Continuous I 8.0 A D Drain current *1 Pulsed I 16 A DP Continuous I 8.0 A Source current S *1 (Body Diode) Pulsed I 16 A SP *2 Power dissipation P 15 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 8.33 C / W th (ch-c) * T =25C c www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New DesignsData Sheet RSD080P05 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 45 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =45V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 3.0 V V =10V, I =1mA GS (th) DS D -65 91 I =8.0A, V =10V D GS Static drain-source on-state * R m DS (on) - 95 133 I =8.0A, V =4.5V D GS resistance - 105 147 I =8.0A, V =4.0V D GS ** Forward transfer admittance l Y l 6.0 - - S I =8.0A, V =10V fs D DS Input capacitance C - 1000 - pF V =10V iss DS Output capacitance C - 160 - pF V =0V oss GS Reverse transfer capacitance C - 80 - pF f=1MHz rss Turn-on delay time t ** - 12 - ns I =4.0A, V 25V d(on) D DD Rise time t ** - 15 - ns V =10V r GS Turn-off delay time t ** - 50 - ns R =6.25 d(off) L ** Fall time t - 20 - ns R =10 f G ** Total gate charge Q - 9.0 - nC V 25V g DD ** Gate-source charge Q - 4.0 - nC I =8.0A, gs D Gate-drain charge Q ** - 3.0 - nC V =5V gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =8.0A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs