X-On Electronics has gained recognition as a prominent supplier of RS1E200BNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E200BNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E200BNTB ROHM

RS1E200BNTB electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RS1E200BNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, N-CH, 30V, 20A, HSOP-8
Datasheet: RS1E200BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
80: USD 0.4972 ea
Line Total: USD 39.78 
Availability - 2298
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 80  Multiples: 1
Pack Size: 1
Availability Price Quantity
2298
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 80
Multiples : 1
80 : USD 0.4972
100 : USD 0.4484
200 : USD 0.4468
500 : USD 0.373
1000 : USD 0.3367
2000 : USD 0.3335

29
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 30
Multiples : 1
30 : USD 3.1624

2425
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 187
Multiples : 1
187 : USD 0.5508
250 : USD 0.5288
500 : USD 0.5097
1000 : USD 0.4931
2500 : USD 0.4784

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RS1E200BNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E200BNTB and other electronic components in the MOSFETs category and beyond.

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RS1E200BN Datasheet Nch 30V 68A Power MOSFET llOutline V 30V DSS R (Max.) 3.9m DS(on) HSOP8 I 68A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E200BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 68 A c D Continuous drain current T = 25C I 20 A a D *2 I Pulsed drain current 80 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 32 A AS *3 E Avalanche energy, single pulse 130 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.006 RS1E200BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 16V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 20A - 2.8 3.9 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 20A - 3.8 5.3 GS D Gate resistance R f=1MHz, open drain - 2.0 - G Forward Transfer *5 Y V = 5V, I = 20A 15 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 24V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.006 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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