VNB20N07TR-E STMicroelectronics

VNP20N07FI VNB20N07/VNV20N07 OMNIFE: FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP20N07FI 70 V 0.05 20 A VNB20N07 70 V 0.05 20 A VNV20N07 70 V 0.05 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN ISOWATT220 3 SHORT CIRCUIT PROTECTION 2 INTEGRATED CLAMP 1 LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE 10 POWER MOSFET (ANALOG DRIVING) 3 COMPATIBLE WITH STANDARD POWER 1 1 MOSFET D2PAK PowerSO-10 TO-263 DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power enviroments. MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and Fault feedback can be detected by monitoring the overvoltage clamp protect the chip in harsh voltage at the input pin. BLOCK DIAGRAM (* ) (* ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10 SOURCE = 1,2,4,5 DRAIN = TAB 1/13 September 2013VNP20N07FI-VNB20N07-VNV20N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit PowerSO-10 ISOWATT220 D2PAK V Drain-source Voltage (V = 0) Internally Clamped V DS in V Input Voltage 18 V in I Drain Current Internally Limited A D I Reverse DC Output Current -28 A R Vesd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V o P Total Dissipation at T = 25 C83 34W tot c o T Operating Junction Temperature Internally Limited C j o T Case Operating Temperature Internally Limited C c o T Storage Temperature -55 to 150 C stg THERMAL DATA ISOWATT220 PowerSO-10 D2PAK o R Thermal Resistance Junction-case Max 3.75 1.5 1.5 C/W thj-case o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 62.5 C/W o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source Clamp I = 200 mA V = 0 607080 V CLAMP D in Voltage V Drain-source Clamp I = 2 mA V = 0 55 V CLTH D in Threshold Voltage V Input-Source Reverse I = -1 mA -1 -0.3 V INCL in Clamp Voltage I Zero Input Voltage V = 13 V V = 0 50 A DSS DS in Drain Current (V = 0) V = 25 V V = 0 200 A in DS in I Supply Current from V = 0 V V = 10 V 250 500 A ISS DS in Input Pin ON (* ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Input Threshold V = V I + Ii = 1 mA 0.8 3 V IN(th) DS in D n Voltage R Static Drain-source On V = 10 V I = 10 A 0.05 DS(on) in D Resistance Vin = 5 V ID = 10 A 0.07 DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (* ) Forward V = 13 V I = 10 A 13 17 S fs DS D Transconductance C Output Capacitance V = 13 V f = 1 MHz V = 0 500 800 pF oss DS in 2/13