VNB35NV04 STMicroelectronics

VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET 10 3 Description 1 1 2 PowerSO-10 D PAK The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz 3 2 1 applications. TO-220 Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by Features monitoring the voltage at the input pin. Type R I V DS(on) lim clamp VNB35NV04-E (1) VNP35NV04-E 10 m 30 A 40 V VNV35NV04-E 1. For PowerSO-10 only Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Table 1. Device summary Order codes Package Tube Tape and reel 2 D PAK VNB35NV04-E VNB35NV04TR-E TO-220 VNP35NV04-E PowerSO-10 VNV35NV04-E VNV35NV04TR-E October 2013 DocID023550 Rev 4 1/26 This is information on a product in full production. www.st.comContents VNB35NV04-E, VNP35NV04-E, VNV35NV04-E Contents 1 Block diagram and pin connection . 5 2 Electrical specification . 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Protection features . 9 2.5 Electrical characteristics curves 13 3 Package informantion . 17 3.1 ECOPACK . 17 3.2 TO-220 mechanical data . 17 3.3 PowerSO-10 mechanical data . 18 3.4 D2PAK mechanical data 20 3.5 TO-220 packing information . 22 3.6 PowerSO-10 packing information . 22 2 3.7 D PAK packing information . 23 4 Revision history . 25 2/26 DocID023550 Rev 4