VNB35NV04-E STMicroelectronics

VNB35NV04-E, VNP35NV04-E, VNV35NV04-E OMNIFET II: fully autoprotected Power MOSFET Datasheet - production data Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power 10 MOSFET (analog driving) 3 Compatible with standard Power MOSFET 1 1 2 PowerSO-10 D PAK Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed 3 2 in STMicroelectronics VIPower M0-3 1 TO-220 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Features Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by Type R I V DS(on) lim clamp monitoring the voltage at the input pin. VNB35NV04-E (1) VNP35NV04-E 10 m 30 A 40 V VNV35NV04-E 1. For PowerSO-10 only Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Table 1. Device summary Order codes Package Tube Tape and reel 2 D PAK VNB35NV04-E VNB35NV04TR-E TO-220 VNP35NV04-E PowerSO-10 VNV35NV04-E VNV35NV04TR-E February 2015 DocID023550 Rev 5 1/27 This is information on a product in full production. www.st.comContents VNB35NV04-E, VNP35NV04-E, VNV35NV04-E Contents 1 Block diagram and pin connection . 5 2 Electrical specification . 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Protection features . 9 2.5 Electrical characteristics curves 13 3 Package information 17 3.1 ECOPACK . 17 3.2 TO-220 mechanical data . 17 3.3 PowerSO-10 mechanical data . 19 3.4 D2PAK mechanical data 21 3.5 TO-220 packing information . 23 3.6 PowerSO-10 packing information . 24 2 3.7 D PAK packing information . 25 4 Revision history . 26 2/27 DocID023550 Rev 5