X-On Electronics has gained recognition as a prominent supplier of RRQ045P03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRQ045P03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRQ045P03TR ROHM

RRQ045P03TR electronic component of ROHM
RRQ045P03TR ROHM
RRQ045P03TR MOSFETs
RRQ045P03TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RRQ045P03TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -4.5A
Datasheet: RRQ045P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2362 ea
Line Total: USD 1.24 
Availability - 1864
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1864
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.2362
10 : USD 0.8484
100 : USD 0.5456
500 : USD 0.4543
1000 : USD 0.4092
3000 : USD 0.3652
6000 : USD 0.3652
9000 : USD 0.3498

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRQ045P03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRQ045P03TR and other electronic components in the MOSFETs category and beyond.

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RRQ045P03 Datasheet Pch -30V -4.5A Small Signal MOSFET llOutline SOT-457T V -30V DSS SC-95 R (Max.) 35m DS(on) TSMT6 I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UB llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 4.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170410 - Rev.002 Not Recommended for New Designs RRQ045P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4.5A - 25 35 GS D Static drain - source *4 R V = -4.5V, I = -2.2A - 34 48 m DS(on) GS D on - state resistance V = -4.0V, I = -2.2A - 38 53 GS D R Gate resistance f = 1MHz, open drain - 14 - G Forward Transfer *4 Y V = -10V, I = -4.5A 3.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170410 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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