X-On Electronics has gained recognition as a prominent supplier of RS1E300GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1E300GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1E300GNTB ROHM

RS1E300GNTB electronic component of ROHM
RS1E300GNTB ROHM
RS1E300GNTB MOSFETs
RS1E300GNTB  Semiconductors

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See Product Specifications
Part No. RS1E300GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RS1E300GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4686 ea
Line Total: USD 1171.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 05 May to Wed. 07 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.4686
5000 : USD 0.4488

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 96
Multiples : 1
96 : USD 1.1578
100 : USD 1.1061
250 : USD 1.0616
500 : USD 0.984
1000 : USD 0.9519

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 140
Multiples : 1
140 : USD 0.6558

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 111
Multiples : 111
111 : USD 0.9271
250 : USD 0.8898
500 : USD 0.8577
1000 : USD 0.8298

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RS1E300GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E300GNTB and other electronic components in the MOSFETs category and beyond.

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RS1E300GN Datasheet Nch 30V 80A Power MOSFET llOutline V 30V DSS R (Max.) 2.2m DS(on) HSOP8 I 80A D P 33W D llInner circuit llFeatures 1) Low on - resistance. 2) High power package (HSOP8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1E300GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 30 A a D *2 I Pulsed drain current 120 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 30 A AS *3 E Avalanche energy, single pulse 68 mJ AS *1 P 33 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.003 Not Recommended for New Designs RS1E300GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.7 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 30A - 1.7 2.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 30A - 2.2 3.3 GS D R Gate resistance f=1MHz, open drain - 1.1 - G Forward Transfer *5 Y V = 5V, I = 30A 32.0 - - S fs DS D Admittance *1 Tc = 25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20160517 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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