Data Sheet 4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 <SOT-428> 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 2500 2 RSD175N10 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS *3 Continuous I 17.5 A D Drain current *1 Pulsed I 35 A DP Continuous I *3 17.5 A Source current S (Body Diode) *1 Pulsed I 35 A SP *2 Power dissipation P 20 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 P 10s, Duty cycle1% W *2 T =25C C *3 Please use within the range of SOA. Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 6.25 C / W * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A Not Recommended for New Designs 0.9 5.5 1.5 0.8Min. 1.5 2.5 9.5Data Sheet RSD175N10 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =100V, V =0V DSS DS GS Gate threshold voltage V 1 - 2.5 V V =10V, I =1mA GS (th) DS D - 75 105 I =8.8A, V =10V D GS Static drain-source on-state * R DS (on) - 80 112 m I =8.8A, V =4.5V D GS resistance - 85 119 I =8.8A, V =4V D GS ** Forward transfer admittance l Y l5 - - S V =10V, I =8.8A fs DS D Input capacitance C - 950 - pF V =25V iss DS Output capacitance C - 85 - pF V =0V oss GS Reverse transfer capacitance C - 55 - pF f=1MHz rss Turn-on delay time t - 10 - ns V 50V, I =8.8A ** d(on) DD D Rise time t - 25 - ns V =10V ** r GS Turn-off delay time t - 60 - ns R =5.7 ** d(off) L Fall time t ** - 50 - ns R =10 f G Total gate charge Q ** - 24 - nC V 50V, I =17.5A g DD D Gate-source charge Q -3 - nCV =10V ** gs GS Gate-drain charge Q -6 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =17.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A Not Recommended for New Designs