2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 SOT-416 1.6 0.7 0.55 0.3 ( ) 3 Features (2) (1) 1) High speed switing. 0.2 0.2 0.15 2) Small package(EMT3). 0.5 0.5 1.0 3) Low voltage drive(2.5V drive). (1)Source (2)Gate Abbreviated symbol : RK (3)Drain Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 2 RSE002N06 (2) 1 Absolute maximum ratings (Ta = 25 C) (1) (1) Source (2) Gate Parameter Symbol Limits Unit 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 250 mA D Drain current *1 Pulsed I 1A DP Continuous I 125 mA Source current S *1 (Body Diode) Pulsed I 1A SP *2 Power dissipation P 150 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to ambient Rth (ch-a) 833 C / W * Each terminal mounted on a recommended land. www.rohm.com 2010.01 - Rev.A 1/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 0.8 1.6 0.1Min. RSE002N06 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.3 V V =10V, I =1mA GS (th) DS D -1.7 2.4 I =250mA, V =10V D GS Static drain-source on-state -2.1 3.0 I =250mA, V =4.5V D GS ** R DS (on) resistance -2.3 3.2 I =250mA, V =4.0V D GS - 3.0 12.0 I =10mA, V =2.5V D GS ** Forward transfer admittance l Y l 0.25 - - S I =250mA, V =10V fs D DS Input capacitance C -15 - pFV =25V iss DS Output capacitance C -4.5 - pFV =0V oss GS Reverse transfer capacitance C -2.0 - pFf=1MHz rss Turn-on delay time t *** -3.5 - nsI =100mA, V 30V d(on) D DD Rise time t *** -5 - nsV =10V r GS Turn-off delay time t ** -18 - nsR 300 d(off) L Fall time t *** -28 - nsR =10 f G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward voltage V -- 1.2 VI =250mA, V =0V SD s GS *Pulsed www.rohm.com 2010.01 - Rev.A 2/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs