X-On Electronics has gained recognition as a prominent supplier of RSF010P03TL MOSFET across the USA, India, Europe, Australia, and various other global locations. RSF010P03TL MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RSF010P03TL ROHM

RSF010P03TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RSF010P03TL
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -1A
Datasheet: RSF010P03TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1304 ea
Line Total: USD 391.2

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.2507
6000 : USD 0.2345

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7604
10 : USD 0.6299
100 : USD 0.4703
500 : USD 0.3695
1000 : USD 0.2855

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1917
6000 : USD 0.1775
9000 : USD 0.1775
15000 : USD 0.1775
30000 : USD 0.1775

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1304
96000 : USD 0.0904

0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.222
9000 : USD 0.2208
24000 : USD 0.2139
45000 : USD 0.2127

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RSF010P03TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSF010P03TL and other electronic components in the MOSFET category and beyond.

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RSF010P03 Transistors 4V Drive Pch MOSFET RSF010P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 z Features 1) Low on-resistance. 2) High speed switching. zApplications (1) Gate (2) Source Abbreviated symbol : WX Switching (3) Drain z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSF010P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 20 V GSS Continuous ID 1 A Drain current 1 Pulsed IDP 4 A Source current Continuous IS 0.3 A (Body diode) 1 Pulsed I 4 A SP 2 Total power dissipation PD 0.8 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 156 C/W Mounted on a ceramic board Rev.B 1/4 0.2Max.RSF010P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 250 350 m I = 1A, V = 10V D GS Static drain-source on-state RDS (on) 400 560 m ID= 0.5A, VGS= 4.5V resistance 450 630 m ID= 0.5A, VGS= 4.0V Forward transfer admittance Yfs 0.5 SVDS= 10V, ID= 0.5A Input capacitance C 120 pF V = 10V iss DS Output capacitance Coss 27 pF VGS=0V Reverse transfer capacitance Crss 17 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 0.5A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 20 ns RL=30 Fall time tf 12 ns RG =10 Total gate charge Q 1.9 nC V 15V, V = 5V g DD GS Gate-source charge Qgs 0.7 nC ID= 1A Gate-drain charge Qgd0.4 nC RL=15, RG =10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.3A, VGS=0V Rev.B 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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