RSF010P03TL ROHM

RSF010P03 Transistors 4V Drive Pch MOSFET RSF010P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 z Features 1) Low on-resistance. 2) High speed switching. zApplications (1) Gate (2) Source Abbreviated symbol : WX Switching (3) Drain z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSF010P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 20 V GSS Continuous ID 1 A Drain current 1 Pulsed IDP 4 A Source current Continuous IS 0.3 A (Body diode) 1 Pulsed I 4 A SP 2 Total power dissipation PD 0.8 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 156 C/W Mounted on a ceramic board Rev.B 1/4 0.2Max.RSF010P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 250 350 m I = 1A, V = 10V D GS Static drain-source on-state RDS (on) 400 560 m ID= 0.5A, VGS= 4.5V resistance 450 630 m ID= 0.5A, VGS= 4.0V Forward transfer admittance Yfs 0.5 SVDS= 10V, ID= 0.5A Input capacitance C 120 pF V = 10V iss DS Output capacitance Coss 27 pF VGS=0V Reverse transfer capacitance Crss 17 pF f=1MHz Turn-on delay time t 8 ns VDD 15V d (on) ID= 0.5A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 20 ns RL=30 Fall time tf 12 ns RG =10 Total gate charge Q 1.9 nC V 15V, V = 5V g DD GS Gate-source charge Qgs 0.7 nC ID= 1A Gate-drain charge Qgd0.4 nC RL=15, RG =10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.3A, VGS=0V Rev.B 2/4