X-On Electronics has gained recognition as a prominent supplier of RSC002P03T316 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSC002P03T316 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSC002P03T316 ROHM

RSC002P03T316 electronic component of ROHM
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See Product Specifications
Part No.RSC002P03T316
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RSC002P03T316 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1672 ea
Line Total: USD 0.17 
Availability - 5715
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5715
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1672
10 : USD 0.1111
100 : USD 0.0473
1000 : USD 0.0462
3000 : USD 0.0352
9000 : USD 0.033
24000 : USD 0.033

5820
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1042
Multiples : 1
1042 : USD 0.0913
2500 : USD 0.0885
5000 : USD 0.0862

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 962
Multiples : 1
962 : USD 0.1022
1000 : USD 0.0988
2500 : USD 0.0959

4127
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1029
Multiples : 1
1029 : USD 0.0395
3000 : USD 0.0391

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSC002P03T316 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSC002P03T316 and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4V Drive Pch MOSFET RSC002P03 Structure Dimensions (Unit : mm) SST3 Silicon P-channel MOSFET <SOT-23> Features 1) Low on-resistance. 2) Low-voltage drive (4V). Abbreviated symbol : WP Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T316 Basic ordering unit (pieces) 3000 1 RSC002P03 2 (1) Source (2) (1) (2) Gate 1 BODY DIODE (3) Drain 2 ESD PROTECTION DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 0.25 A D Drain current *1 Pulsed I 0.5 A DP *2 Power dissipation P 0.2 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on recommended land-pattern. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 625 C / W * Mounted on recommended land-pattern. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/5Data Sheet RSC002P03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1- 2.5 V V =10V, I =1mA GS (th) DS D - 0.9 1.4 I =0.25A, V =10V D GS Static drain-source on-state * R DS (on) - 1.4 2.1 I =0.15A, V =4.5V D GS resistance - 1.6 2.4 I =0.15A, V =4V D GS ** Forward transfer admittance l Y l 0.2 - - S V =10V, I =0.15A fs DS D Input capacitance C - 30 - pF V =10V iss DS Output capacitance C - 10 - pF V =0V oss GS Reverse transfer capacitance C - 5 - pF f=1MHz rss Turn-on delay time t -4 - nsV 15V, I =0.15A ** d(on) DD D Rise time t -6 - nsV =10V r ** GS Turn-off delay time t - 20 - ns R 100 ** d(off) L Fall time t - 23 - ns R =10 ** f G *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =0.1A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.08 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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