X-On Electronics has gained recognition as a prominent supplier of RS1G180MNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1G180MNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1G180MNTB ROHM

RS1G180MNTB electronic component of ROHM
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See Product Specifications
Part No.RS1G180MNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Trans MOSFET N-CH 40V 18A
Datasheet: RS1G180MNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.738 ea
Line Total: USD 1.74 
Availability - 1505
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1505
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.738
10 : USD 1.166
100 : USD 0.8536
500 : USD 0.7194
1000 : USD 0.6633
2500 : USD 0.6578
5000 : USD 0.6325

67
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 70
Multiples : 1
70 : USD 1.5384

1088
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 15
Multiples : 1
15 : USD 2.7692
50 : USD 1.8094
100 : USD 1.6835
200 : USD 1.6678
500 : USD 1.4146
1000 : USD 1.3374

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Package / Case
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Series
Brand
Factory Pack Quantity :
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We are delighted to provide the RS1G180MNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G180MNTB and other electronic components in the MOSFETs category and beyond.

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RS1G180MN Nch 40V 57A Power MOSFET Datasheet llOutline V 40V DSS R (Max.) 7.0m DS(on) HSOP8 I 57A D P 30W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G180MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 57 A c D Continuous drain current T = 25C I 18 A a D *2 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 18 A AS *3 E Avalanche energy, single pulse 25 mJ AS *1 P 30 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170706 - Rev.002 RS1G180MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.1 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 18A - 5.0 7.0 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 18A - 6.7 9.2 GS D R Gate resistance f=1MHz, open drain - 4.1 - G Forward Transfer *5 Y V = 10V, I = 18A 11 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20170706 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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