RS1G180MN Nch 40V 57A Power MOSFET Datasheet llOutline V 40V DSS R (Max.) 7.0m DS(on) HSOP8 I 57A D P 30W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G180MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 57 A c D Continuous drain current T = 25C I 18 A a D *2 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 18 A AS *3 E Avalanche energy, single pulse 25 mJ AS *1 P 30 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170706 - Rev.002 RS1G180MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.1 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 18A - 5.0 7.0 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 18A - 6.7 9.2 GS D R Gate resistance f=1MHz, open drain - 4.1 - G Forward Transfer *5 Y V = 10V, I = 18A 11 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20170706 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.