X-On Electronics has gained recognition as a prominent supplier of RS1G180MNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1G180MNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1G180MNTB ROHM

Hot RS1G180MNTB electronic component of ROHM
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Part No.RS1G180MNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Trans MOSFET N-CH 40V 18A
Datasheet: RS1G180MNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
18: USD 2.275 ea
Line Total: USD 40.95 
Availability - 1088
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 18  Multiples: 1
Pack Size: 1
Availability Price Quantity
2117
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9868
10 : USD 0.8919
30 : USD 0.8408
100 : USD 0.7819
500 : USD 0.6719
1000 : USD 0.6604

1505
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.679
10 : USD 1.15
100 : USD 0.8602
500 : USD 0.721
1000 : USD 0.6877
2500 : USD 0.6612

1088
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 18
Multiples : 1
18 : USD 2.275
50 : USD 1.7387
100 : USD 0.5005
200 : USD 0.4989
500 : USD 0.4598
1000 : USD 0.4469

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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We are delighted to provide the RS1G180MNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G180MNTB and other electronic components in the MOSFETs category and beyond.

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RS1G180MN Nch 40V 57A Power MOSFET Datasheet llOutline V 40V DSS R (Max.) 7.0m DS(on) HSOP8 I 57A D P 30W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G180MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 57 A c D Continuous drain current T = 25C I 18 A a D *2 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 18 A AS *3 E Avalanche energy, single pulse 25 mJ AS *1 P 30 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20170706 - Rev.002 RS1G180MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.1 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 18A - 5.0 7.0 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 18A - 6.7 9.2 GS D R Gate resistance f=1MHz, open drain - 4.1 - G Forward Transfer *5 Y V = 10V, I = 18A 11 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20170706 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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