X-On Electronics has gained recognition as a prominent supplier of RS1G300GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1G300GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1G300GNTB ROHM

RS1G300GNTB electronic component of ROHM
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Part No.RS1G300GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4.5V Drive Nch MOSFET
Datasheet: RS1G300GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.244 ea
Line Total: USD 2.24 
Availability - 1140
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1140
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.244
10 : USD 1.595
100 : USD 1.199
500 : USD 0.9977
1000 : USD 0.9713
2500 : USD 0.8965

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1G300GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G300GNTB and other electronic components in the MOSFETs category and beyond.

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RS1G300GN Datasheet Nch 40V 80A Power MOSFET llOutline V 40V DSS R (Max.) 2.5m DS(on) HSOP8 I 80A D P 35W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 High-Efficiency DC/DC converter application Taping code TB Motor Drivers Marking RS1G300GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 80 A c D Continuous drain current T = 25C I 30 A a D *2 I Pulsed drain current 120 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 30 A AS *3 E Avalanche energy, single pulse 130 mJ AS *1 P 35 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171018 - Rev.002 RS1G300GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 3.57 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 30A - 1.9 2.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 30A - 2.4 3.0 GS D R Gate resistance f=1MHz, open drain - 1.5 - G Forward Transfer *5 Y V = 5V, I = 30A 36 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.2mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171018 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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