DMTH6009LK3 Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to +175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C Environments C Low R Ensures on State Losses are Minimized DS(ON) 10m V = 10V 59A GS Excellent Q R Product (FOM) gd x DS(ON) 60V Advanced Technology for DC/DC Converters 12.8m V = 4.5V 52A GS Small Form Factor Thermally Efficient Package Enables Higher Density End Products Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6009LK3Q) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Case: TO252 (DPAK) making it ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH6009LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6009LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 16 V GSS T = +25C 14.2 A Continuous Drain Current (Note 5) V = 10V I A GS D 11.9 T = +70C A T = +25C 59 C A Continuous Drain Current (Note 6) V = 10V I GS D 49 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I 80 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 90 A DM Avalanche Current, L=0.1mH I 20.3 A AS Avalanche Energy, L=0.1mH E 20.6 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3.2 W P D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) P 60 W D Thermal Resistance, Junction to Case (Note 6) 2.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA IGSS VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.7 1.4 2 V VGS(TH) VDS = VGS, ID = 250A - 8.3 10 m V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance R DS(ON) - 9.6 12.8 m V = 4.5V, I = 11.5A GS D Diode Forward Voltage - 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1,925 - C iss V = 30V, V = 0V, DS GS Output Capacitance - 438 - pF C oss f = 1MHz 41 Reverse Transfer Capacitance C - - rss 1.7 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 15.6 Total Gate Charge (V = 4.5V) Q - - GS g 33.5 Total Gate Charge (V = 10V) Q - - GS g nC V = 30V, I = 13.5A DS D 4.7 Gate-Source Charge - - Qgs 5.3 Gate-Drain Charge - - Q gd Turn-On Delay Time - 4.5 - t D(ON) Turn-On Rise Time - 8.6 - t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time - 35.9 - t R = 6, I = 13.5A D(OFF) g D Turn-Off Fall Time - 15.7 - t F 18.2 Body Diode Reverse Recovery Time t - - ns RR I = 13.5A, di/dt = 400A/s F 33.1 Body Diode Reverse Recovery Charge Q - - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6009LK3 March 2016 Diodes Incorporated www.diodes.com Document number: DS37921 Rev. 3 - 2 ADAVDAVNACNECDE DIN IFNOFROMRMATAITOINO N