X-On Electronics has gained recognition as a prominent supplier of RS3E075ATTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS3E075ATTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS3E075ATTB ROHM

RS3E075ATTB electronic component of ROHM
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See Product Specifications
Part No.RS3E075ATTB
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 30 V 2W (Ta) Surface Mount 8-SOP-J
Datasheet: RS3E075ATTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6003 ea
Line Total: USD 0.6 
Availability - 7726
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7726
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6003
10 : USD 0.5279
100 : USD 0.3864
500 : USD 0.3416
1000 : USD 0.3312
2500 : USD 0.3301

2425
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 194
Multiples : 1
194 : USD 1.2995

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS3E075ATTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS3E075ATTB and other electronic components in the MOSFETs category and beyond.

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RS3E075AT Datasheet Pch -30V -7.5A Middle Power MOSFET llOutline V -30V DSS R (Max.) 23.5m DS(on) SOP8 I 7.5A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS3E075AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 7.5 A D *2 I Pulsed drain current 30 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse -7.5 A AS *3 E Avalanche energy, single pulse 4.2 mJ AS *4 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RS3E075AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = -10, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -7.5A - 18.0 23.5 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -7.5A - 24.0 31.0 GS D Forward Transfer *5 Y V = -5V, I = -7.5A 7.5 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 100H, V = -15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *4 Mounted on a ceramic boad (30300.8mm) *5 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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