RSA30LTE25 ROHM

L 30 Data Sheet ESD protection device (TVS) RSA30L Applications Dimensions (Unit : mm) Land size figure (Unit : mm) For terminal protection device 2.0 2.60.2 Features 1) Small power mold type. (PMDS) 2) High reliability 0.10.02 0.1 PMDS 2.00.2 1.50.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date Taping specifications (Unit : mm) 2.00.05 4.00.1 1.550.05 0.3 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Peak pulse (tp=101000us) 600 Ppk W V Stand off power 25.6 V RMN Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Breakdown voltage V 28.5 - 31.5 V I =1.0mA BR R Clamping voltage V - - 41.4 V I =14.4A C pp Reverse current I V =25.6V -- 5 uA R RMN www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.05 - Rev.C 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 5.50.05 2.0 1.750.1 120.2 4.2RSA30L Data Sheet 10 10 10000 Ta=150 Ta=125 f=1MHz 1000 Ta=75 Ta=150 100 1 Ta=25 Ta=75 10 Ta=125 Ta=-25 1 1 Ta=25 0.1 0.1 Ta=-25 0.01 0.01 0.001 0.1 0.0001 0.001 0 5 10 15 20 25 0 5 10 15 20 25 25 26 27 28 29 30 31 32 33 34 REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) ZENER VOLTAGE:Vz(V) VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS Vz-Iz CHARACTERISTICS 1 32 0.2 Ta=25 0.9 Ta=25 0.18 Ta=25 f=1MHz IF=1mA 31 VR=3.5V 0.8 0.16 VR=0V n=30pcs AVE:0.884nF n=30pcs n=10pcs 0.7 0.14 0.6 30 0.12 0.5 0.1 29 0.08 0.4 AVE:29.651V 0.3 0.06 AVE:0.0143nA 28 0.04 0.2 0.1 0.02 27 0 0 IR DISRESION MAP Vz DISRESION MAP Ct DISRESION MAP Mounted on epoxy board 100 IM=10mA IF=0.5A 1000 30 No break at 30kV No break at 30kV Rth(j-a) 25 time 1ms 100 300us 20 Rth(j-c) 10 10 15 10 1 5 1 0.1 0 C=200pF C=100pF 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS ESD DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.05 - Rev.C ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE ELECTROSTATIC TERMINALS:Ct(nF) BETWEENTERMINALS:Ct(nF) DISCHARGE TEST ESD(KV)