X-On Electronics has gained recognition as a prominent supplier of RSA6.1ENFHTR across the USA, India, Europe, Australia, and various other global locations. RSA6.1ENFHTR are a product manufactured by ROHM. We provide cost-effective solutions for RSA6.1ENFHTR, ensuring timely deliveries around the world.

RSA6.1ENFHTR ROHM

RSA6.1ENFHTR electronic component of ROHM
RSA6.1ENFHTR ROHM
RSA6.1ENFHTR Unclassified
RSA6.1ENFHTR

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See Product Specifications
Part No. RSA6.1ENFHTR
Manufacturer: ROHM
Category: Unclassified
Description: ESD PROTECTION DEVICE, AEC-Q101, SOT-353
Datasheet: RSA6.1ENFHTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.8327 ea
Line Total: USD 4.16 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 5
Multiples : 1
5 : USD 0.8327
25 : USD 0.4754
100 : USD 0.3314
250 : USD 0.2456
500 : USD 0.2165
1000 : USD 0.1832

   
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No. Of Pins
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We are delighted to provide the RSA6.1ENFHTR from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSA6.1ENFHTR and other electronic components in the ROHM manufacturer and beyond.

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RSA6.1ENFH Diodes AEC-Q101 Qualified ESD Protection diode RSA6.1ENFH z Application z External dimensions (Unit : mm) z Lead size figure (Unit : mm) ESD Protection 0.35 2.00.2 0.1 0.25 0.150.05 Each lead has same dimension 0.05 (5) (4) z Features 1) Small mold type. (UMD5) 2) High reliability. 00.1 0.65 0.65 (1) (2) (3) 0.65 0.65 UMD5 0.7 1.30.1 0.90.1 zConstruction Silicon epitaxial planar z Structure ROHM : UMD5 JEDEC : SOT-353 JEITA : SC-88A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.1 4.00.1 2.00.05 0.30.1 0 1.10.1 2.250.1 4.00.1 1.150.1 0 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm200W Peak Pulse Power-1(tp=101000us) P 30 W pk P 200 Peak Pulse Power-2(tp=820us) W pk Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V Zener voltage 6.1 - 7.20 V I =1mA Z Z Reverse current I -- 1.0 A V =3.0V R R Forward voltage V - - 1.25 V I =200mA F F Capacitance between terminals C -90 - pF f=1MHz,V =0V t R Rev.C 1/2 2.450.1 1.250.1 2.10.1 0.1Min 2.40.1 0.9 5.50.2 00.5 3.50.05 1.750.1 8.00.2 2.40.1 1.6RSA6.1ENFH Diodes z Electrical characteristic curves (Ta=25C) 1000 1000 10 Ta=150 Ta=125 100 f=1MHz 10 Ta=75 1 Ta=25 Ta=75 100 1 Ta=125 0.1 Ta=-25 Ta=25 0.1 Ta=150 0.01 10 Ta=-25 0.001 0.01 0.0001 0.001 0.00001 1 0 0.5 11.5 22.5 3 6 6.5 7 7.5 8 00.511.5 22.53 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 150 0.2 7.2 140 Ta=25 0.18 Ta=25 Ta=25 f=1MHz 130 IZ=1mA 0.16 7.1 VR=3V VR=0V n=30pcs n=30pcs 120 0.14 n=10pcs 110 0.12 7 100 0.1 90 6.9 0.08 AVE:0.0190nA 80 0.06 70 6.8 0.04 AVE:99.8pF 60 AVE:6.891V 0.02 50 6.7 0 Vz DISRESION MAP Ct DISRESION MAP IR DISRESION MAP 1000 100 Rth(j-a) 100 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS Rev.C 2/2 ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) REVERSE CURRENT:IR (nA) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

RHE
RHM
ROHM Semicon
ROHM Semiconductor
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