X-On Electronics has gained recognition as a prominent supplier of RSB12WTL Zener Diodes across the USA, India, Europe, Australia, and various other global locations. RSB12WTL Zener Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

RSB12WTL ROHM

RSB12WTL electronic component of ROHM
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See Product Specifications
Part No.RSB12WTL
Manufacturer: ROHM
Category: Zener Diodes
Description: TVS Diodes - Transient Voltage Suppressors DI; LO-CAPACITANCE ZENER; SMT;EMD3
Datasheet: RSB12WTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3388 ea
Line Total: USD 0.34

Availability - 2
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 463
Multiples : 1
463 : USD 0.2201
500 : USD 0.2122
1000 : USD 0.2053
2500 : USD 0.1991
5000 : USD 0.1939

   
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Pd - Power Dissipation
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the RSB12WTL from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSB12WTL and other electronic components in the Zener Diodes category and beyond.

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Data Sheet Low Capacitance Protection Device RSB12W Applications Dimensions(Unit : mm) Land size figure(Unit : mm) ESD Protection 1.0 0.5 0.5 1.6 0.2 0.30.1 0.15 0.05 0.05 (3) Features 0.7 1)Ultra small mold type.(EMD3) 2)Low capacitance 0 0.1 3)Bi direction 0.6 0.6 (2) (1 ) 0.20.1 -0.05 EMD3 0.55 0.1 0.5 0.5 1.0 0.1 0.7 0.1 Construction Silicon epitaxial planer Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot(year week factory) Taping specifications(Unit : mm) 1.1.5550.0.11 4.00.1 2.00.05 0.30.1 00 1.80.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm150W Junction temperature Tj 150 C Storage temperature 55 to 150 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C -1 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.B 1/2 0.8 0.1 1. 60. 2 0.1M in 0.7 1.80.2 5.50.2 0.7 00.1 3.50.05 1.750.1 8.00.2 1.3RSB12W Data Sheet Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 Ta=25 100 1 Ta=75 Ta=75 10 Ta=125 Ta=- Ta=25 1 0.1 1 Ta=150 0.1 Ta=- 0.01 0.01 0.001 0.0001 0.001 0.1 11 12 13 14 15 16 01 2 345 67 89 01 234 567 8 9 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R REVERSE VOLTAGE:V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R 10 1.5 13.8 Ta=25 Ta=25 Ta=25 9 1.4 I =5mA V =9V f=1MHz Z R 8 1.3 13.7 V =0V n=30pcs n=30pcs R 7 n=10pcs 1.2 6 1.1 13.6 5 1 4 13.5 0.9 AVE:0.996pF 3 0.8 AVE:13.572V 2 13.4 0.7 AVE:0.3089nA 1 0.6 0 13.3 0.5 Vz DISRESION MAP Ct DISRESION MAP I DISRESION MAP R 10000 Mounted on epoxy board 100 I =1mA I =10mA M F 1ms time 1000 Rth(j- 300us ) 10 IM=10mA IF=100mA Rth(j- 100 ) time 1ms 300us 1 10 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.B ZENER CURRENT:Iz(mA) ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() TRANSIENT REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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