RSAC6.8CST2RA ROHM

Data Sheet Ultra Low Capacitance ESD Protection Diode RSAC6.8CS lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 0 .1 6 0 .0 5 0.55 0 .6 0 .0 5 lFeatures 1)Ultra small mold type.(VMN2) 2)Low Capacitance. 3)High Reliability. 4)By chip-mounter, automatic mounting is possible. VMN2 0.156 lConstruction 0 .3 7 0 .0 3 0 .3 5 0 .1 Silicon epitaxial planar lStructure ROHM : VMN2 dot (year week factory) + day lTaping dimensions (Unit : mm) 1.55 0 .2 0 .0 5 2 0 .0 5 4 0 .1 0.5 0.52 2 0 .0 5 0 .7 0 .0 5 4 .0 0 .1 lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation 100 P mW Junction temperature Tj 150 C Storage temperature C Tstg -55 to +150 lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V Zener voltage 6.7 - 7.33 V I =5mA z Z Reverse current I V =3.0V - - 1.0 A R R Capacitance between terminals V =0V , f=1MHz Ct - 0.3 - pF R * Zener voltage (V ) shall be measured at 40ms after loading current. Z * Electrical characteristic assurance is just only zener direction. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/3 1 .1 0 .0 5 0 .9 0 .0 5 1 .0 0 .0 5 0.45 0.45 3 .5 0 .0 5 1 .7 5 0 .1 8 .0 0 .2 0.5Data Sheet RSAC6.8CS 100 1000 Ta=25 C Ta=75 C 10 Ta=125 C Ta=-25 C Ta=125 C 100 1 Ta=75 C 10 0.1 Ta=25 C 1 0.01 0.001 0.1 5 6 7 8 9 0 1 2 3 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R 10 7.3 f=1MHz Ta=25 C I =5mA Z n=30pcs 7.2 7.1 1 7 AVE:7.05V 6.9 0.1 6.8 0 0.5 1 1.5 2 2.5 3 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 50 1 Ta=25 C Ta=25 C 0.9 f=1MHz V =3V R V =0V 40 n=30pcs 0.8 R n=10pcs 0.7 30 0.6 0.5 AVE:0.303pF 20 0.4 AVE:8.68pA 0.3 10 0.2 0.1 0 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/3 REVERSE CURRENT:I (pA) CAPACITANCE BETWEEN R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER VOLTAGE:Vz( ) REVERSE CURRENT:I (pA) R