X-On Electronics has gained recognition as a prominent supplier of RSA6.1J4FHT2R across the USA, India, Europe, Australia, and various other global locations. RSA6.1J4FHT2R are a product manufactured by ROHM. We provide cost-effective solutions for RSA6.1J4FHT2R, ensuring timely deliveries around the world.

RSA6.1J4FHT2R ROHM

RSA6.1J4FHT2R electronic component of ROHM
RSA6.1J4FHT2R ROHM
RSA6.1J4FHT2R Unclassified
RSA6.1J4FHT2R

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See Product Specifications
Part No. RSA6.1J4FHT2R
Manufacturer: ROHM
Category: Unclassified
Description: ESD PROTECTION DEVICE, AEC-Q101, SOT-553
Datasheet: RSA6.1J4FHT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.773 ea
Line Total: USD 3.86 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 05 May to Fri. 09 May
MOQ : 5
Multiples : 1
5 : USD 0.773
10 : USD 0.547
100 : USD 0.3747
500 : USD 0.2948
1000 : USD 0.2381
5000 : USD 0.2218

   
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We are delighted to provide the RSA6.1J4FHT2R from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSA6.1J4FHT2R and other electronic components in the ROHM manufacturer and beyond.

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RSA6.1J4FH Diodes AEC-Q101 Qualified ESD Protection diode RSA 6.1J4FH z Application z Dimensions (Unit : mm) z Land size figure (Unit : mm) ESD protection 0.4 1.60.1 0.220.05 0.130.05 z Features 0.15 0.15 0.25 0.25 (5 ) (4) 0.3 1) Ultra small mold type. (EMD5) 2) High reliability. 00.1 0.5 0.5 EMD5 (1 ) (2 ) ( 3) z Construction 0.5 0.5 Silicon epitaxial planar z Structure 1.00.1 0.50.05 ROHM : EMD5 JEITA : SC-75A Size dot (year week factory) z Taping specifications (Unit : mm) +0.1 4.00.1 2.00.05 1.5 0.30.1 0 1PIN 0.80.1 4.00.1 1.70.05 0.650.1 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 10 Peak pulse power-1 (tp=101000us) P W pk 80 Peak pulse power-2 (tp=820us) P W pk Junction tem perature Tj 150 Storage tem perature Tstg -55 to +150 z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.1 - 7.20 V I =1mA Z Z Reverse current I -- 1.0 A V =3.0V R R Forward voltage V -- 1.0 V I =100mA F F Capacitance between term inals C -35 - t pF f=1MHz,V =0V R Rev.C 1/2 1.20.1 1.60.1 1.650.1 5.50.2 0 0.1 3.50.05 1.750.1 ~ 0.45 8.00.2 1.650.01 1.55RSA6.1J4FH Diodes z Electrical characteristic curves (Ta=25C) 1000 10 1000 Ta=150 Ta=125 f=1MHz 100 Ta=75 1 Ta=25 10 Ta=125 100 Ta=75 1 Ta=150 Ta=-25 0.1 0.1 Ta=25 0.01 10 Ta=-25 0.01 0.001 0.0001 1 0.001 0.00001 00.5 11.5 2 2.5 3 66.5 7 7.5 8 00.511.52 2.53 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) Vz-Iz CHARACTERISTICS VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS 0.2 6.9 45 Ta=25 0.18 Ta=25 Ta=25 44 f=1MHz VR=3V IZ=1mA 0.16 6.8 43 VR=0V n=30pcs n=30pcs n=10pcs 0.14 42 0.12 6.7 41 0.1 40 6.6 0.08 39 0.06 38 AVE:0.0190nA 0.04 37 6.5 AVE:6.684V 0.02 36 AVE:37.82pF 6.4 0 35 IR DISRESION MAP Vz DISRESION MAP Ct DISRESION MAP 1000 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS Rev.C 2/2 ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

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RHM
ROHM Semicon
ROHM Semiconductor
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