RSA6.1J4T2R ROHM

RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 z Application z Dimensions (Unit : mm) z Land size figure (Unit : mm) ESD protection 0.4 1.60.1 0.220.05 0.130.05 z Features 0.15 0.15 0.25 0.25 (5 ) (4) 0.3 1) Ultra small mold type. (EMD5) 2) High reliability. 00.1 0.5 0.5 EMD5 (1 ) (2 ) ( 3) z Construction 0.5 0.5 Silicon epitaxial planar z Structure 1.00.1 0.50.05 ROHM : EMD5 JEITA : SC-75A Size dot (year week factory) z Taping specifications (Unit : mm) +0.1 4.00.1 2.00.05 1.5 0.30.1 0 1PIN 0.80.1 4.00.1 1.70.05 0.650.1 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 10 Peak pulse power-1 (tp=101000us) P W pk 80 Peak pulse power-2 (tp=820us) P W pk Junction tem perature Tj 150 Storage tem perature Tstg -55 to +150 z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 6.1 - 7.20 V I =1mA Z Z Reverse current I -- 1.0 A V =3.0V R R Forward voltage V -- 1.0 V I =100mA F F Capacitance between term inals C -35 - t pF f=1MHz,V =0V R Rev.C 1/2 1.20.1 1.60.1 1.650.1 5.50.2 0 0.1 3.50.05 1.750.1 ~ 0.45 8.00.2 1.650.01 1.55RSA6.1J4 Diodes z Electrical characteristic curves (Ta=25C) 1000 10 1000 Ta=150 Ta=125 f=1MHz 100 Ta=75 1 Ta=25 10 Ta=125 100 Ta=75 1 Ta=150 Ta=-25 0.1 0.1 Ta=25 0.01 10 Ta=-25 0.01 0.001 0.0001 1 0.001 0.00001 00.5 11.5 2 2.5 3 66.5 7 7.5 8 00.511.5 2 2.5 3 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) Vz-Iz CHARACTERISTICS VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS 6.9 0.2 45 Ta=25 0.18 Ta=25 Ta=25 44 f=1MHz VR=3V IZ=1mA 0.16 6.8 43 VR=0V n=30pcs n=30pcs n=10pcs 0.14 42 6.7 0.12 41 0.1 40 6.6 0.08 39 0.06 38 AVE:0.0190nA 0.04 37 6.5 AVE:6.684V 0.02 36 AVE:37.82pF 6.4 0 35 IR DISRESION MAP Vz DISRESION MAP Ct DISRESION MAP 1000 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS Rev.C 2/2 ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)