RSA12LTE25 ROHM

L 12 RSA12L Diodes ESD Protection Device (TVS) RSA12L z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) ESD Protection 2.0 2.60.2 z Features 1) Small power mold type. (PMDS) 2) High reliability 0.10.02 0.1 z Construction Silicon epitaxial planar 2.00.2 1.50.2 PMDS z Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date z Taping specifications(Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Peak pulse power(tp=101000us) Ppk 600 W Stand off power V 12 V RMN Junction temperature Tj 150 Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Breakdown voltage VBR 13.3 - 14.7 V I =1mA R Clamping voltage VC - - 19.5 V I =31.0A pp V =12.0V Reverse current IR - - 2.5 uA RMN 1/2 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2RSA12L Diodes z Electrical characteristic curves (Ta=25C) 10 10 10000 Ta=150 Ta=125 f=1MHz Ta=75 Ta=150 1000 1 100 Ta=25 Ta=125 Ta=75 10 Ta=-25 1 0.1 Ta=25 1 0.1 Ta=-25 0.01 0.01 0.1 0.001 0.001 01 2 3 45 6 7 89 101112 012 345 678 9 101112 11 12 13 14 15 16 17 18 19 REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) ZENER VOLTAGE:Vz(V) VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS Vz-Iz CHARACTERISTICS 2 14.5 1 1.9 Ta=25 Ta=25 0.9 Ta=25 f=1MHz IZ=1mA 1.8 14.4 0.8 VR=12V VR=0V n=30pcs n=30pcs 1.7 AVE:1.856nF n=10pcs 0.7 1.6 14.3 0.6 1.5 0.5 AVE:0.81nA 1.4 14.2 0.4 AVE:14.24V 1.3 0.3 1.2 14.1 0.2 1.1 0.1 1 14 0 IR DISRESION MAP Vz DISRESION MAP Ct DISRESION MAP Mounted on epoxy board 10000 IM=10mA IF=0.5A 30 1000 No break at 30kV No break at 30kV Rth(j-a) 25 time 1ms 1000 100 300us 20 Rth(j-c) 100 15 10 10 10 1 5 1 0 0.1 C=200pF C=100pF 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS ESD DISPERSION MAP 2/2 ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN ELECTROSTATIC BETWEENTERMINALS:Ct(nF) TERMINALS:Ct(nF) DISCHARGE TEST ESD(KV)