RSF010P05 Datasheet Pch -45V -1A Small Signal MOSFET llOutline SOT-323T V -45V DSS TUMT3 R (Max.) 460m DS(on) I 1A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Small high power package 3) Low voltage drive(4V) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking SU llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS I Continuous drain current 1 A D *1 I Pulsed drain current 4 A DP V Gate - Source voltage 20 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160602 - Rev.001 RSF010P05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1A - 330 460 GS D Static drain - source *4 R V = -4.5V, I = -0.5A - 450 630 m DS(on) GS D on - state resistance V = -4V, I = -0.5A - 490 690 GS D R Gate resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -1A 1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) 2 *3 Mounted on a FR4 (25x25x0.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160602 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.