X-On Electronics has gained recognition as a prominent supplier of RSJ400N10TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSJ400N10TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSJ400N10TL ROHM

Hot RSJ400N10TL electronic component of ROHM
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See Product Specifications
Part No.RSJ400N10TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4V Drive Nch MOSFET
Datasheet: RSJ400N10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0837 ea
Line Total: USD 2.08 
Availability - 337
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
337
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0837
10 : USD 1.9159
30 : USD 1.8109
100 : USD 1.4998
500 : USD 1.4522
1000 : USD 1.4292

921
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.114
10 : USD 2.86
25 : USD 2.695
100 : USD 2.31
250 : USD 2.277
500 : USD 1.98
1000 : USD 1.892

452
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 52
Multiples : 1
52 : USD 3.5927
300 : USD 3.1341

7
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 6.2563

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSJ400N10TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSJ400N10TL and other electronic components in the MOSFETs category and beyond.

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RSJ400N10 Nch 100V 40A Power MOSFET Datasheet Outline (2) V 100V DSS TO-263S R (Max.) 27m DS(on) SC-83 I 40A D LPT(S) (1) P 50W (3) D Features Inner circuit (3) 1) Low on-resistance. (1) Gate 1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. 2 4) Parallel use is easy. 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RSJ400N10 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS *1 T = 25C I 40 A c D Continuous drain current *1 T = 100C I 22 A c D *2 Pulsed drain current A I 80 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 14.6 mJ E AS *3 Avalanche current I 10 A AR T = 25C P 50 W c D Power dissipation *4 P 1.35 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 1/12Datasheet RSJ400N10 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 2.5 C/W Thermal resistance, junction - case thJC *4 R - - 92.6 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 100 - - V (BR)DSS GS D V = 100V, V = 0V DS GS - -1 T = 25C j Zero gate voltage drain current I A DSS V = 100V, V = 0V DS GS - - 100 = 125C T j I V = 20V, V = 0V Gate - Source leakage current -- 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS (th) DS D V = 10V, I = 40A -19 27 GS D V = 4.0V, I = 40A -21 30 GS D Static drain - source *5 R m DS(on) on - state resistance V = 10V, I = 40A GS D -42 60 T = 125C j g V = 10V, I = 40A Forward transfer admittance 23 56 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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