X-On Electronics has gained recognition as a prominent supplier of RSQ020N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ020N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ020N03TR ROHM

RSQ020N03TR electronic component of ROHM
RSQ020N03TR ROHM
RSQ020N03TR MOSFETs
RSQ020N03TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSQ020N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Med Pwr, Sw MOSFET N Chan, 30V, 2A
Datasheet: RSQ020N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
279: USD 0.2327 ea
Line Total: USD 64.92 
Availability - 2655
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 279  Multiples: 1
Pack Size: 1
Availability Price Quantity
2206
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 443
Multiples : 1
443 : USD 0.5392

2655
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 279
Multiples : 1
279 : USD 0.2327
500 : USD 0.1976
1000 : USD 0.1859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
Transistor Type
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSQ020N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ020N03TR and other electronic components in the MOSFETs category and beyond.

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RSQ020N03 Datasheet Nch 30V 2A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 134m DS(on) TSMT6 I 2.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QQ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180702 - Rev.003 RSQ020N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 2.0A - 96 134 GS D Static drain - source *4 R V = 4.5V, I = 2.0A - 148 207 m DS(on) GS D on - state resistance V = 4.0V, I = 2.0A - 168 235 GS D R Gate resistance f = 1MHz, open drain - 9.2 - G Forward Transfer *4 Y V = 10V, I = 2.0A 1.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180702 - Rev.003 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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