RSR025P03TL ROHM

0~0.1 RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) z Features 1) Low On-resistance ( ) (2) 2) Space savingsmall surface mount package (TSMT3) 1 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WY zApplications (3) Drain Switching z Packaging specifications z Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 RSR025P03 (1) 2 1 (2) (1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 30 Drain-source voltage VDSS V 20 Gate-source voltage VGSS V Continuous I 2.5 A D Drain current 1 10 Pulsed IDP A 0.8 Source current Continuous IS A (Body diode) 1 10 Pulsed ISP A 2 Total power dissipation P 1 W D 150 Channel temperature Tch C 55 to +150 Range of storage temperature Tstg C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board Rev.A 1/4 1.6 2.8 0.3~0.6RSR025P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 70 98 m I = 2.5A, V = 10V D GS Static drain-source on-state RDS (on) 100 140 m ID= 1.2A, VGS= 4.5V resistance 115 160 m ID= 1.2A, VGS= 4V Forward transfer admittance Yfs 1.6 SVDS= 10V, ID= 1.2A Input capacitance C 460 pF V = 10V iss DS Output capacitance Coss 105 pF VGS=0V Reverse transfer capacitance Crss 65 pF f=1MHz Turn-on delay time t 10 ns VDD 15V d (on) ID= 1.2A Rise time tr 10 ns VGS= 10V Turn-off delay time td (off) 42 ns RL=12.5 Fall time tf 10 ns RGS=10 Q 5.4 nC V 15V VGS= 5V Total gate charge g DD I = 2.5A Gate-source charge Qgs 1.4 nC D RG=10 Gate-drain charge Qgd1.6 nC RL=6 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.8A, VGS=0V Rev.A 2/4