X-On Electronics has gained recognition as a prominent supplier of RTF016N05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF016N05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTF016N05TL ROHM

RTF016N05TL electronic component of ROHM
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See Product Specifications
Part No.RTF016N05TL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45 V 1.6A (Ta) 320mW (Ta) Surface Mount TUMT3
Datasheet: RTF016N05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
45: USD 0.9035 ea
Line Total: USD 40.66 
Availability - 2231
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 45  Multiples: 1
Pack Size: 1
Availability Price Quantity
2231
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 45
Multiples : 1
45 : USD 0.9035
68 : USD 0.6013
138 : USD 0.2957
200 : USD 0.2942
500 : USD 0.2925
1000 : USD 0.2519

2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 297
Multiples : 1
297 : USD 0.3441
500 : USD 0.3318
1000 : USD 0.321
2500 : USD 0.3115

2198
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 241
Multiples : 1
241 : USD 0.5988
500 : USD 0.4013

12
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 13
Multiples : 1
13 : USD 7.8758

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RTF016N05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF016N05TL and other electronic components in the MOSFETs category and beyond.

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RTF016N05 Nch 45V 1.6A Power MOSFET Datasheet lOutline V TUMT3 45V DSS (3) R (Max.) 190mW DS(on) I 1.6A (1) D P 0.8W (2) D lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TUMT3). 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking PU lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS *1 Continuous drain current I 1.6 A D *2 Pulsed drain current A I 6.4 D,pulse V Gate - Source voltage 12 V GSS *3 P 0.8 W D Power dissipation *4 0.32 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RTF016N05 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 156 C/W thJA *4 Thermal resistance, junction - ambient R - - 391 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 41 - mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 12V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.5 - 1.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -2.5 - mV/C temperature coefficient T referenced to 25C j V =4.5V, I =1.6A - 140 190 GS D V =4.0V, I =1.6A - 150 210 GS D Static drain - source *5 R m W DS(on) on - state resistance V =2.5V, I =1.6A - 200 280 GS D V =4.5V, I =1.6A, T =125C - 230 320 GS D j R Gate input resistannce f = 1MHz, open drain - 10 - W G *5 Transconductance V = 10V, I = 1.6A 1.5 3.5 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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