X-On Electronics has gained recognition as a prominent supplier of RTF025N03FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTF025N03FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTF025N03FRATL ROHM

RTF025N03FRATL electronic component of ROHM
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See Product Specifications
Part No.RTF025N03FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg
Datasheet: RTF025N03FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 19576
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19576
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3615
100 : USD 0.1813
1000 : USD 0.164
3000 : USD 0.1271
9000 : USD 0.1201
24000 : USD 0.1189
45000 : USD 0.1155

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RTF025N03FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTF025N03FRATL and other electronic components in the MOSFETs category and beyond.

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RTF025N03FRA Datasheet Nch 30V 2.5A Small Signal MOSFET llOutline SOT-323T V 30V DSS SC-113A R (Max.) 67m DS(on) TUMT3 I 2.5A D P 0.8W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TUMT3) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Basic ordering unit (pcs) 3000 Taping code TL Marking PL llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 12 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180301 - Rev.003 RTF025N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 48 67 GS D Static drain - source *4 R V = 4.0V, I = 2.5A - 50 70 m DS(on) GS D on - state resistance V = 2.5V, I = 2.5A - 70 98 GS D R Gate resistance f = 1MHz, open drain - 7.8 - G Forward Transfer *4 Y V = 10V, I = 2.5A 2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180301 - Rev.003 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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