X-On Electronics has gained recognition as a prominent supplier of RTQ020N03TR MOSFET across the USA, India, Europe, Australia, and various other global locations. RTQ020N03TR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RTQ020N03TR ROHM

Hot RTQ020N03TR electronic component of ROHM
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See Product Specifications
Part No.RTQ020N03TR
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET N-CH 30V 2A TSMT6
Datasheet: RTQ020N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

173: USD 0.2284 ea
Line Total: USD 39.51

Availability - 2438
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 173  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.0742
50 : USD 0.0722
150 : USD 0.0709
500 : USD 0.0697

885
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5439
10 : USD 0.4669
100 : USD 0.3289
500 : USD 0.2645
1000 : USD 0.2208
3000 : USD 0.1909
9000 : USD 0.1909
24000 : USD 0.1863

967
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 397
Multiples : 1
397 : USD 0.2489
500 : USD 0.2399

5820
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 397
Multiples : 1
397 : USD 0.2489
500 : USD 0.2399
1000 : USD 0.2321
2500 : USD 0.2252
5000 : USD 0.2191

2438
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 173
Multiples : 1
173 : USD 0.2284
200 : USD 0.2268
500 : USD 0.1843
1000 : USD 0.1733
2000 : USD 0.1717

2910
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 397
Multiples : 1
397 : USD 0.2489
500 : USD 0.2399
1000 : USD 0.2321
2500 : USD 0.2252

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the RTQ020N03TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ020N03TR and other electronic components in the MOSFET category and beyond.

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RTQ020N03 Datasheet Nch 30V 2A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 125m DS(on) TSMT6 I 2.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20180130 - Rev.001 RTQ020N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 89 125 GS D Static drain - source *4 R V = 4.0V, I = 2A - 94 132 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 138 194 GS D R Gate resistance f = 1MHz, open drain - 9.0 - G Forward Transfer *4 Y V = 10V, I = 2A 2.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180130 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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