X-On Electronics has gained recognition as a prominent supplier of RTQ020N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ020N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTQ020N03TR ROHM

Hot RTQ020N03TR electronic component of ROHM
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See Product Specifications
Part No.RTQ020N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N-CH 30V 2A TSMT6
Datasheet: RTQ020N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
228: USD 0.1787 ea
Line Total: USD 40.74 
Availability - 2419
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 228  Multiples: 1
Pack Size: 1

 RTQ020N03TR More Buying Options & Price Grid(s)

Availability Price Quantity
885
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6875
10 : USD 0.4411
100 : USD 0.3003
500 : USD 0.2398
1000 : USD 0.2222
3000 : USD 0.1826
9000 : USD 0.1782
24000 : USD 0.1738

957
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 323
Multiples : 1
323 : USD 0.3159
500 : USD 0.3045

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 323
Multiples : 1
323 : USD 0.3159
500 : USD 0.3045
1000 : USD 0.2945
2500 : USD 0.2858
5000 : USD 0.2781

2419
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 228
Multiples : 1
228 : USD 0.1787
500 : USD 0.1513
1000 : USD 0.1469

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 323
Multiples : 1
323 : USD 0.3159
500 : USD 0.3045
1000 : USD 0.2945
2500 : USD 0.2858

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTQ020N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ020N03TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

RTQ020N03 Datasheet Nch 30V 2A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 125m DS(on) TSMT6 I 2.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20180130 - Rev.001 RTQ020N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 89 125 GS D Static drain - source *4 R V = 4.0V, I = 2A - 94 132 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 138 194 GS D R Gate resistance f = 1MHz, open drain - 9.0 - G Forward Transfer *4 Y V = 10V, I = 2A 2.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180130 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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