RTQ030P02 Transistor 2.5V Drive Pch MOS FET RTQ030P02 z External dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(110m at 2.5V) 2) High Power Package. 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TS z Applications DC-DC converter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping TR Code Type Basic ordering unit 2 3000 (pieces) RTQ030P02 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 12 V 3 Continuous ID A Drain current 1 12 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTQ030P02 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=12V, VDS=0V Drain-source breakdown voltage V(BR)DSS 20 V ID=1 , VmA, GS=0V Zero gate voltage drain current IDSS 1 A VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.7 V VDS=10V, ID=1mA 2.0 60 80 m ID=3A, VGS=4.5V 65 90 m ID=3A, VGS=4V Static drain-source on-state RDS(on) resistance 110 150 m ID=1.5A, VGS=2.5V Foward transfer admittance Yfs 2.0 S VDS=10V, ID=1.5A Ciss 800 pF Input capacitance VGS=0V VDS=10V, Output capacitance Coss 150 pF f=1MHz Reverse transfer capacitance Crss 100 pF Turn-on delay time td(on) 15 ns ID=1.5A Rise time tr 27 ns VDD 15V VGS=4.5V Turn-off delay time td(off) 50 ns RL=10 RG=10 Fall time tf 20 ns Total gate charge Qg 9.0 nC VDD 15V Gate-source charge Qgs 1.6 nC VGS=4.5V ID=3A Gate-drain charge Qgd 4.6 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions IS=1A, VGS=0V Forward voltage VSD 1.2 V Rev.A 2/4