X-On Electronics has gained recognition as a prominent supplier of RUE002N05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUE002N05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUE002N05TL ROHM

RUE002N05TL electronic component of ROHM
RUE002N05TL ROHM
RUE002N05TL MOSFETs
RUE002N05TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RUE002N05TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN
Datasheet: RUE002N05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
360: USD 0.0961 ea
Line Total: USD 34.6 
Availability - 0
MOQ: 360  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0521
9000 : USD 0.05
15000 : USD 0.05
60000 : USD 0.05
90000 : USD 0.05

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0715
9000 : USD 0.0594
24000 : USD 0.0572
45000 : USD 0.0539
99000 : USD 0.0517

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 360
Multiples : 1
360 : USD 0.0961
500 : USD 0.096
1000 : USD 0.0811

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 186
Multiples : 1
186 : USD 0.1837

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RUE002N05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUE002N05TL and other electronic components in the MOSFETs category and beyond.

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1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 1 RUE002N05 2 Absolute maximum ratings (Ta = 25C) (2) (1) (1) SOURCE Parameter Symbol Limits Unit (2) GATE 1 BODY DIODE (3) DRAIN 2 ESD PROTECTION DIODE Drain-source voltage V 50 V DSS Gate-source voltage V 8V GSS Continuous I 200 mA D Drain current *1*1 Pulsed I 800 mA DP Continuous I 125 mA Source current S *1*1 (Body Diode) Pulsed I 800 mA SP *2*2 Power dissipation P 150 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw 10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to ambient Rth (ch-a) 833 C / W * Each terminal mounted on a recommended land. www.rohm.com 2010.06 - Rev.B 1/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs RUE002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =8V, V =0V GSS GS DS Drain-source breakdown voltage V 50 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =50V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -1.6 2.2 I =200mA, V =4.5V D GS -1.7 2.4 I =200mA, V =2.5V D GS Static drain-source on-state * R DS (on) -1.9 2.7 I =100mA, V =1.8V D GS resistance -2.0 4.0 I =40mA, V =1.5V D GS -2.4 7.2 I =20mA, V =1.2V D GS * Forward transfer admittance l Y l 0.4 - - S I =200mA, V =10V fs D DS Input capacitance C -25 - pFV =10V iss DS Output capacitance C -6 - pFV =0V oss GS Reverse transfer capacitance C -3 - pFf=1MHz rss Turn-on delay time t ** -4 - nsI =100mA, V 30V d(on) D DD Rise time t ** -6 - nsV =4.5V r GS Turn-off delay time t ** -15 - nsR =300 d(off) L Fall time t ** -55 - nsR =10 f G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward voltage V -- 1.2 VI =200mA, V =0V SD s GS *Pulsed www.rohm.com 2010.06 - Rev.B 2/5 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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