RV2C002UN Datasheet Nch 20V 180mA Small Signal MOSFET llOutline DFN1006-3 V 20V DSS SC-101 R (Max.) 2.0 DS(on) VML1006 I 180mA D P 100mW D llFeatures llInner circuit 1) Low on - resistance. 2) High Power small mold Package (VML1006). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2L Marking RY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 180 mA D *1 Pulsed drain current I 600 mA DP V Gate - Source voltage 10 V GSS *2 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 RV2C002UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 150mA - 1.4 2.0 GS D V = 2.5V, I = 150mA - 1.7 2.6 GS D Static drain - source *3 R V = 1.8V, I = 150mA - 2.2 3.4 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 2.7 5.4 GS D V = 1.2V, I = 10mA - 3.8 11.4 GS D Forward Transfer *3 Y V = 10V, I = 150mA 110 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160825 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.