X-On Electronics has gained recognition as a prominent supplier of RVQ040N05FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RVQ040N05FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RVQ040N05FRATR ROHM

RVQ040N05FRATR electronic component of ROHM
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Part No.RVQ040N05FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, AEC-Q101, N-CH, 45V, TSMT
Datasheet: RVQ040N05FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.7332 ea
Line Total: USD 3.67 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 1
5 : USD 0.7332
10 : USD 0.5363
100 : USD 0.3855
500 : USD 0.3181
1000 : USD 0.2681
5000 : USD 0.241

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RVQ040N05FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RVQ040N05FRATR and other electronic components in the MOSFETs category and beyond.

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RVQ040N05FRA Nch 45V 4A Power MOSFET Datasheet Outline (6) TSMT6 V 45V DSS (5) (4) R (Max.) 53m DS(on) (1) I 4A D (2) P 1.25W (3) D Features Inner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 5) AEC-Q101 Qualified 2 BODY DIODE Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking QG Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS *1 Continuous drain current I 4.0 A D *2 Pulsed drain current A I 16 D,pulse V Gate - Source voltage 21 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2016.06 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 1/11Data Sheet RVQ040N05FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 100 C/W thJA *4 Thermal resistance, junction - ambient R - - 208 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 42 - mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 21V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 4.2 - mV/C temperature coefficient T referenced to 25C j V =10V, I =4A - 38 53 GS D V =4.5V, I =4A - 47 66 GS D Static drain - source *5 R m DS(on) on - state resistance V =4V, I =4A - 53 74 GS D V =10V, I =4A, T =125C - 70 100 GS D j R Gate input resistannce f = 1MHz, open drain - 7 - G *5 V = 10V, I = 4A Transconductance 3 6 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) www.rohm.com 2016.06 - Rev.C 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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