Data Sheet 1.5V Drive Pch MOSFET RW1A025AP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol : SD Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Basic ordering unit (pieces) 8000 RW1A025AP 1 (1) Drain (2) Drain (3) Gate (4) Source Absolute maximum ratings (Ta = 25 C) (5) Drain (1) (2) (3) Parameter Symbol Limits Unit (6) Drain 1 ESD PROTECTION DIODE Drain-source voltage V 12 V DSS 2 BODY DIODE Gate-source voltage V 0 to 8 V GSS Continuous I 2.5 A D Drain current *1 Pulsed I 7.5 A DP Continuous I 0.5 A Source current S (Body Diode) *1*1 Pulsed I 7.5 A SP *2*2 Power dissipation P 0.7 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 179 C / W *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/6Data Sheet RW1A025AP Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 8V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV = 12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V = 6V, I = 1mA GS (th) DS D -44 62 I = 2.5A, V = 4.5V D GS -55 77 I = 1.2A, V = 2.5V Static drain-source on-state D GS * R m DS (on) resistance - 75 110 I = 1.2A, V = 1.8V D GS - 90 180 I = 0.5A, V = 1.5V D GS * Forward transfer admittance l Y l 3.5 - - S I = 2.5A, V = 6V fs D DS Input capacitance C - 2000 - pF V = 6V iss DS Output capacitance C - 130 - pF V =0V oss GS Reverse transfer capacitance C - 120 - pF f=1MHz rss Turn-on delay time t - 11 - ns I = 1.2A, V 6V * d(on) D DD Rise time t - 40 - ns V = 4.5V * r GS Turn-off delay time t * - 160 - ns R =5 d(off) L Fall time t * - 60 - ns R =10 f G Total gate charge Q - 16 - nC I = 2.5A * g D Gate-source charge Q * - 2.4 - nC V 6V gs DD Gate-drain charge Q - 2.2 - nC V = 4.5V gd* GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 2.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A