X-On Electronics has gained recognition as a prominent supplier of RUF025N02FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF025N02FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RUF025N02FRATL ROHM

RUF025N02FRATL electronic component of ROHM
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See Product Specifications
Part No.RUF025N02FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 20V Vds 2.5A 0.08Rds(on) 5Qg
Datasheet: RUF025N02FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5302 ea
Line Total: USD 0.53 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.341
100 : USD 0.2277
500 : USD 0.1815
1000 : USD 0.165
3000 : USD 0.1287
9000 : USD 0.1287
24000 : USD 0.1276
45000 : USD 0.1232

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RUF025N02FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF025N02FRATL and other electronic components in the MOSFETs category and beyond.

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RUF025N02FRA Datasheet Nch 20V 2.5A Small Signal MOSFET llOutline SOT-323T V 20V DSS R (Max.) 54m DS(on) TUMT3 I 2.5A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 5 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160808 - Rev.002 RUF025N02FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.3 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 39 54 GS D V = 2.5V, I = 2.5A - 49 68 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1.3A - 65 91 GS D V = 1.5V, I = 0.5A - 80 160 GS D R Gate resistance f = 1MHz, open drain - 7.5 - G Forward Transfer *4 Y V = 10V, I = 2.5A 3.6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20160808 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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