Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 FC4B22270L1 Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 1.29 4 3 Features 1 2 Low source-source ON resistance:Rss(on) typ. = 18 m VGS = 3.8 V) CSP(Chip Size Package) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1) 0.25 Marking Symbol: 2J Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 0.5 (0.395) (0.395) 1. Source1 (FET1) 3. Gate2 (FET2) 2. Gate1 (FET1) 4. Source2 (FET2) Absolute Maximum Ratings Ta = 25 C Panasonic ULGA004-W-1313-RA JEITA Parameter Symbol Rating Unit Source-source Voltage VSS 20 V Code Gate-source Voltage VGS 12 V *1 4 IS Equivalent circuit Source Current (DC) A *2 8 IS *2 40 A Source Current (Pulsed) ISp *1 0.37 PD Total Power Dissipation W *2 1.5 PD 4(S2) 3(G2) Tch 150 Channel Temperature C Storage Temperature Range Tstg -55 to +150 C FET2 *1 338 Rth Thermal Resistance (ch-a) C/W *2 83 Rth Note *1 Mounted on FR4 board ( 25.4 mm 25.4 mm t1.0 mm ) FET1 using the minimum recommended pad size (36m Copper ). *2 Mounted on Ceramic substrate (70 mm 70 mm t1.0 mm). 1(S1) 2(G1) *3 t = 10 s, Duty Cycle 1 % 1of 5 Page Established : 2016-11-09 Revised : - - 1.29 0.5 0.10 0.11Doc No. TT4-ZZ-02012 Revision. 1 Product Standards MOS FET FC4B22270L1 Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS = 1 mA, VGS = 0 V 20 V Zero Gate Voltage Source Current ISSS VSS = 20 V, VGS = 0 V 1.0 A Gate-source Leakage Current IGSS VGS = 8 V, VSS = 0 V 10 A Gate-source Threshold Voltage Vth IS = 0.31 mA, VSS = 10 V 0.35 0.90 1.4 V RSS(on)1 IS = 2.0 A, VGS = 4.5 V 12 17 22 RSS(on)2 IS = 2.0 A, VGS = 3.8 V 12.5 18 23 Source-source On-state Resistance m RSS(on)3 IS = 2.0 A, VGS = 3.1 V 13.5 19 26.5 RSS(on)4 IS = 2.0 A, VGS = 2.5 V 14 22 37 VF(s-s) IF = 2.0 A, VGS = 0 V 0.8 1.2 V Body Diode Forward Voltage *1 Ciss 910 Input Capacitance *1 Coss VSS = 10 V, VGS = 0 V, f = 1 KHz 105 pF Output Capacitance *1 Crss 80 Reverse Transfer Capacitance *1,*2 td(on) VDD = 10 V, VGS = 0 to 4.0 V 0.25 Turn-on delay Time s *1,*2 tr 0.55 Rise Time IS = 2.0 A *1,*2 td(off) VDD = 10 V, VGS = 4.0 to 0 V 1.65 Turn-off delay Time s *1,*2 tf IS = 2.0 A 1.0 Fall Time *1 Qg 9 Total Gate Charge VDD = 10 V *1 Qgs VGS = 0 to 4.0 V, 2.6 nC Gate-source Charge *1 IS = 2.0 A Qgd 2.4 Gate-drain Charge Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2:Measurement circuit VDD = 10 V IS = 2.0 A RL = 5.0 Vout 90 % S2 Vin 10 % Rg G2 90 % 90 % Vout Rg G1 Vin 10 % 10 % 4 V S1 0 V td(on) tr td(off) tf PW = 10 s D.C. 1 % 2 of 5 Page Established : 2016-11-09 Revised : - -