FC6546010R Panasonic

Doc No. TT4-EA-12667 Revision. 3 Product Standards MOS FET FC6546010R FC6546010R Dual N-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 3 0.7 Marking Symbol V6 (0.65)(0.65) 1.3 Basic Part Number : Dual FK350601 (Individual) 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) Packaging 3. Drain(FET2) 6. Drain(FET1) Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic SMini6-F3-B JEITA SC-113DB Code SOT-363 Absolute Maximum Ratings Ta = 25 C Internal Connection Parameter Symbol Rating Unit (D1) (G2) (S2) Drain-source breakdown voltage VDSS 60 V 6 5 4 FET1 Gate-source breakdown voltage VGSS 12 V FET2 Drain current ID 100 mA FET1 Pulse drain current IDp 200 mA Total power dissipation PT 150 mW Channel temperature Tch 150 C FET2 Overall Operating ambient temperature Topr -40 to + 85 C Storage temperature Tstg -55 to +150 C 1 2 3 (S1) (G1) (D2) Pin Name 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1) Page 1of 6 Established : 2010-07-02 Revised : 2013-08-26 1.25 2.1Doc No. TT4-EA-12667 Revision. 3 Product Standards MOS FET FC6546010R Electrical Characteristics Ta = 25 C 3C FET1,FET2 Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH ID = 1.0 A, VDS = 3.0 V 0.9 1.2 1.5 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 815 Drain-source ON resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 6 12 Forward transfer admittance Yfs ID = 10 mA, VDS = 3.0 V2060 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V *1 ton 100 ns Turn-on time ID = 10 mA VDD = 3 V, VGS = 3 to 0 V *1 Turn-off time toff 100 ns ID = 10 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit Page 2of 6 Established : 2010-07-02 Revised : 2013-08-26