Doc No. TT4-EA-15076 Revision. 1 Product Standards MOS FET FC6B22160L1 FC6B22160L1 Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.65 6 5 4 Features Low source-source ON resistance:Rss(on) typ. = 4.9 mW VGS = 3.8 V) 1 2 3 CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.3 Marking Symbol: 36 Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 0.65 0.65 (0.675) (0.51) 1. Source1-1 (FET1) 4. Source2-1 (FET2) 2. Gate1 (FET1) 5. Gate2 (FET2) 3. Source1-2 (FET1) 6. Source2-2 (FET2) Absolute Maximum Ratings Ta = 25 C Panasonic MLGA006-W-1727-RB Parameter Symbol Rating Unit JEITA VSS 20 V Code Source-source Voltage Gate-source Voltage VGS 8 V *1 IS1 8 A DC Equivalent circuit *2 Source Current IS2 17 A DC *3 ISp 80 A Pulse *1 PD1 0.45 W DC Total Power Dissipation *2 PD2 2.1 W DC Channel Temperature Tch 150 C Tstg -55 to +150 Storage Temperature Range C FET2 *1 Rth1 278 C/W DC Thermal Resistance (ch-a) *2 Rth2 59 C/W DC Note *1 Mounted on FR4 board ( 25.4 mm 25.4 mm t1.0 mm ) FET1 using the minimum recommended pad size (36mm Copper ). *2 Mounted on Ceramic substrate (70 mm 70 mm t1.0 mm). *3 t = 10 ms, Duty Cycle 1 % Page 1 of 5 Established : 2015-10-23 Revised : - - 1.67 0.65 0.11Doc No. TT4-EA-15076 Revision. 1 Product Standards MOS FET FC6B22160L1 Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS = 1 mA, VGS = 0 V 20 V Zero Gate Voltage Source Current ISSS VSS = 20 V, VGS = 0 V 1.0 mA VGS = 8 V, VSS = 0 V 10 Gate-source Leakage Current IGSS mA VGS = 5 V, VSS = 0 V 1.0 Gate-source Threshold Voltage Vth IS = 1.1 mA, VSS = 10 V 0.35 0.90 1.4 V RSS(on)1 IS = 4.0 A, VGS = 4.5 V 3.5 4.7 6.2 RSS(on)2 IS = 4.0 A, VGS = 4.0 V 3.6 4.8 6.4 Source-source On-state Resistance RSS(on)3 IS = 4.0 A, VGS = 3.8 V 3.7 4.9 6.6 mW RSS(on)4 IS = 4.0 A, VGS = 3.1 V 3.9 5.2 8.6 RSS(on)5 IS = 4.0 A, VGS = 2.5 V 4 6 11.8 Body Diode Forward Voltage VF(s-s) IF = 4.0 A, VGS = 0 V 0.8 1.2 V *1 Ciss 3250 Input Capacitance *1 Coss VSS = 10 V, VGS = 0 V, f = 1 MHz 290 pF Output Capacitance *1 Crss 250 Reverse Transfer Capacitance *1,*2 td(on) VDD = 10 V, VGS = 0 to 4.0 V 1.2 Turn-on delay Time ms *1,*2 tr IS = 4.0 A 2.4 Rise Time *1,*2 td(off) VDD = 10 V, VGS = 4.0 to 0 V 8.1 Turn-off delay Time ms *1,*2 tf IS = 4.0 A 3.9 Fall Time *1 Qg VDD = 10 V 35 Total Gate Charge *1 Gate-source Charge Qgs VGS = 0 to 4.0 V, 5 nC *1 Qgd IS = 4.0 A 10 Gate-drain Charge Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2 : Measurement circuit VDD = 10 V IS = 4.0 A RL = 2.5 W Vout 90 % S2 Vin 10 % Rg G2 90 % 90 % Vout Rg G1 Vin 10 % 10 % 4 V 50 W S1 0 V td(on) tr td(off) tf PW = 10 ms D.C. 1 % Page 2 of 5 Established : 2015-10-23 Revised : - -