Doc No. TT4-EA-13030 Revision. 2 Product Standards MOS FET FC8J33040L FC8J33040L Dual N-channel MOSFET Unit: mm For switching 2.9 For DC-DC Converter 0.3 0.16 8 7 6 5 Features Low drain-source On-state Resistance : RDS(on) typ = 48 m (VGS = 4.5 V) High-speed switching : Qg = 2.8 nC Halogen-free / RoHS compliant 1 234 (0.81) (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.65 .1 Source .2 Drain Marking Symbol: 7A 1. 5. 21 Gate 62 Drain .2 Source .1 Drain 3. 7. Basic Part Number : Dual Nch MOS 33V (Individual) 42 Gate 81 Drain Panasonic WMini8-F1 Packaging JEITA SC-115 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Code Internal Connection (D) (D) (D) (D) Absolute Maximum Ratings Ta = 25 C Tr.1, Tr.2 8 7 6 5 Parameter Symbol Rating Unit Drain-source Voltage VDS 33 V Gate-source Voltage VGS V 20 *1 5 Drain Current (Steady State) ID *1 5.5 Drain Current (t = 10 s) *1,*2 IDp 20 A Drain Current (Pulsed) Source Current (Pulsed) ISp 5 *1,*2 1 2 3 4 (BD) (Body Diode) (S) (G) (S) (G) *1 1 Total Power Dissipation (Steady State) PD W *1 1.3 Pin Name Total Power Dissipation (t = 10 s) Tch 150 .1 Source .2 Drain Channel Temperature C 1. 5. Operating Ambient Temperature Topr -40 to + 85 C 21 Gate 62 Drain Storage Temperature Range Tstg -55 to +150 C 32 Source 71 Drain .2 Gate .1 Drain Note) *1 Device mounted on a glass-epoxy board (See Figure 1) 4. 8. *2 Pulse test: Ensure that the channel temperature does not exceed 150 C. Figure1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm Page 1 of 6 Established : 2011-01-13 Revised : 2013-07-31 2.4 2.8Doc No. TT4-EA-13030 Revision. 2 Product Standards MOS FET FC8J33040L Electrical Characteristics Ta = 25 C 3C Tr.1, Tr.2 Static Characteristics Min Typ Max Unit Parameter Symbol Conditions Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 33 V Zero Gate Voltage Drain Current IDSS VDS = 33 V, VGS = 0 V 1 A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate-source Threshold Voltage Vth ID = 0.26 mA, VDS = 10 V 1 2.5 V RDS(on)1 ID = 2.5 A, VGS = 10 V 32 38 *1 Drain-source On-state Resistance m RDS(on)2 ID = 2.5 A, VGS = 4.5 V 48 68 Dynamic Characteristics Input Capacitance Ciss 220 VDS = 10 V, VGS = 0 V Output Capacitance Coss 40 pF f = 1 MHz Reverse Transfer Capacitance Crss 35 *2 td(on) VDD = 15 V, VGS = 0 to 10 V 7 Turn-on Delay Time *2 tr ID = 2.5 A 3 Rise Time ns *2 td(off) VDD = 15 V, VGS = 10 to 0 V 15 Turn-off Delay Time *2 tf ID = 2.5 A 9 Fall Time Total Gate Charge Qg 2.8 VDD = 15 V, VGS = 0 to 4.5 V, Gate-source Charge Qgs 1.1 nC ID = 5 A Gate-drain Charge Qgd 1.2 Body Diode Characteristic *1 VSD IS = 2.5 A, VGS = 0 V 0.8 1.2 V Diode Forward Voltage 1. Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test: Ensure that the channel temperature does not exceed 150 C. *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established : 2011-01-13 Revised : 2013-07-31